skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

Abstract

Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

Authors:
 [1]; ; ; ;  [2]; ; ;  [3];  [4]
  1. Institut fuer Kristallzuechtung, D-12489 Berlin (Germany)
  2. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  3. Institut fuer Physik, Humboldt-Universitaet zu Berlin, D-12489 Berlin (Germany)
  4. Martin-Luther-Universitaet Halle-Wittenberg, D-06120 Halle/Saale (Germany)
Publication Date:
OSTI Identifier:
20778618
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 96; Journal Issue: 6; Other Information: DOI: 10.1103/PhysRevLett.96.066108; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; DIFFUSION; GALLIUM ARSENIDES; GRAIN ORIENTATION; INDIUM ARSENIDES; QUANTUM DOTS; STRAINS; THREE-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Schmidbauer, M., Seydmohamadi, Sh., Wang, Zh.M., Mazur, Yu.I., Salamo, G.J., Grigoriev, D., Schaefer, P., Koehler, R., and Hanke, M. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation. United States: N. p., 2006. Web. doi:10.1103/PHYSREVLETT.96.0.
Schmidbauer, M., Seydmohamadi, Sh., Wang, Zh.M., Mazur, Yu.I., Salamo, G.J., Grigoriev, D., Schaefer, P., Koehler, R., & Hanke, M. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation. United States. doi:10.1103/PHYSREVLETT.96.0.
Schmidbauer, M., Seydmohamadi, Sh., Wang, Zh.M., Mazur, Yu.I., Salamo, G.J., Grigoriev, D., Schaefer, P., Koehler, R., and Hanke, M. Fri . "Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation". United States. doi:10.1103/PHYSREVLETT.96.0.
@article{osti_20778618,
title = {Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation},
author = {Schmidbauer, M. and Seydmohamadi, Sh. and Wang, Zh.M. and Mazur, Yu.I. and Salamo, G.J. and Grigoriev, D. and Schaefer, P. and Koehler, R. and Hanke, M.},
abstractNote = {Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.},
doi = {10.1103/PHYSREVLETT.96.0},
journal = {Physical Review Letters},
number = 6,
volume = 96,
place = {United States},
year = {Fri Feb 17 00:00:00 EST 2006},
month = {Fri Feb 17 00:00:00 EST 2006}
}