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Title: In situ epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods with reactive sputtering

Abstract

In this work, TiO{sub 2} deposition on RuO{sub 2} nanorods with reactive sputtering was studied. The TiO{sub 2} deposition was performed in situ after the RuO{sub 2} nanorod deposition at the same substrate temperature of 450 deg. C. The morphology examination and structure analysis have indicated a uniform and pure rutile TiO{sub 2} deposition on RuO{sub 2} nanorods. High-resolution transmission electron microscopy images also revealed an epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods. Such a low-temperature fabrication technique for one-dimensional (1D) heteronanostructure may apply to other functional materials. Since RuO{sub 2} is a good electric conductor, 1D heteronanostructures made from RuO{sub 2} nanorods are expected to exhibit enhanced functionality particularly in electrical and electrochemical applications.

Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu City 30043, Taiwan (China)
Publication Date:
OSTI Identifier:
20778581
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 4; Other Information: DOI: 10.1063/1.2166481; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRIC CONDUCTORS; MORPHOLOGY; NANOSTRUCTURES; RUTHENIUM OXIDES; RUTILE; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY

Citation Formats

Cheng, K.-W., Lin, Y.-T., Chen, C.-Y., Hsiung, C.-P., Gan, J.-Y., Yeh, J.-W., Hsieh, C.-H., and Chou, L.-J.. In situ epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods with reactive sputtering. United States: N. p., 2006. Web. doi:10.1063/1.2166481.
Cheng, K.-W., Lin, Y.-T., Chen, C.-Y., Hsiung, C.-P., Gan, J.-Y., Yeh, J.-W., Hsieh, C.-H., & Chou, L.-J.. In situ epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods with reactive sputtering. United States. doi:10.1063/1.2166481.
Cheng, K.-W., Lin, Y.-T., Chen, C.-Y., Hsiung, C.-P., Gan, J.-Y., Yeh, J.-W., Hsieh, C.-H., and Chou, L.-J.. Mon . "In situ epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods with reactive sputtering". United States. doi:10.1063/1.2166481.
@article{osti_20778581,
title = {In situ epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods with reactive sputtering},
author = {Cheng, K.-W. and Lin, Y.-T. and Chen, C.-Y. and Hsiung, C.-P. and Gan, J.-Y. and Yeh, J.-W. and Hsieh, C.-H. and Chou, L.-J.},
abstractNote = {In this work, TiO{sub 2} deposition on RuO{sub 2} nanorods with reactive sputtering was studied. The TiO{sub 2} deposition was performed in situ after the RuO{sub 2} nanorod deposition at the same substrate temperature of 450 deg. C. The morphology examination and structure analysis have indicated a uniform and pure rutile TiO{sub 2} deposition on RuO{sub 2} nanorods. High-resolution transmission electron microscopy images also revealed an epitaxial growth of TiO{sub 2} on RuO{sub 2} nanorods. Such a low-temperature fabrication technique for one-dimensional (1D) heteronanostructure may apply to other functional materials. Since RuO{sub 2} is a good electric conductor, 1D heteronanostructures made from RuO{sub 2} nanorods are expected to exhibit enhanced functionality particularly in electrical and electrochemical applications.},
doi = {10.1063/1.2166481},
journal = {Applied Physics Letters},
number = 4,
volume = 88,
place = {United States},
year = {Mon Jan 23 00:00:00 EST 2006},
month = {Mon Jan 23 00:00:00 EST 2006}
}
  • The synthesis of RuO{sub 2} nanorods with reactive sputtering was demonstrated in this work. The synthesis process is very much like the metal organic chemical vapor deposition, except that RuO{sub 3} generated with reactive sputtering under high oxygen-to-argon flow ratio (>5 SCCM/15 SCCM) (SCCM denotes cubic centimeter per minute at STP) and high substrate temperature (>300 deg. C) is used in place of the metal organic precursor. RuO{sub 2} nanorods tend to grow steadily with constant aspect ratio ({approx}27) and the field-emission characteristics appear very sensitive to their spatial distribution.
  • Al{sub 2}O{sub 3} was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti{sub 2}AlC(0001) thin films on α-Al{sub 2}O{sub 3}(0001) substrates. The Al{sub 2}O{sub 3} was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al{sub 2}O{sub 3}(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al{sub 2}O{sub 3} on Ti{sub 2}AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti{sub 2}AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al{sub 2}O{sub 3}(111)//Ti{sub 2}AlC(0001) (out-of-plane) and γ- Al {sub 2}O{sub 3}(22{sup ¯}0)// Timore » {sub 2} AlC (112{sup ¯}0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 °C resulted in partial decomposition of the Ti{sub 2}AlC by depletion of Al and diffusion into and through the γ-Al{sub 2}O{sub 3} layer.« less
  • Perfect epitaxial growth of superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films have been achieved on (100) SrTiO{sub 3}, (110) SrTiO{sub 3}, and (100) ZrO{sub 2} substrates using a modified planar dc magnetron sputtering system. The films exhibit zero resistances at 87--90 K with transition widths of about 2 K. The critical current density of 1.4{times}10{sup 6} A/cm{sup 2} at 77 K so far has been measured on the (100) SrTiO{sub 3} substrate. The epitaxial orientation of the thin films was influenced by the substrate orientation, the substrate temperature, and the oxygen partial pressure. The quality of growth and themore » epitaxial orientation of the films were examined by electron channeling, x-ray diffraction, and reflection high-energy electron diffraction techniques. The preferential epitaxial orientation is discussed.« less
  • No abstract prepared.
  • High-temperature superconductor GdBa{sub 2}Cu{sub 3}O{sub 7} thin films were epitaxially grown {ital in} {ital situ} on (100) oriented ytrrium-stabilized zirconia single-crystal substrates by dc magnetron sputtering using a single planar target. All samples prepared in continual 12 runs have zero-resistance transition temperature {ital T}{sub {ital c}0} more than 90 K and a transition width 1--2 K. The best films have a {ital T}{sub {ital c}0} of 92.5 K, a transition width of 0.7 K, and a critical current density of 1.4{times}10{sup 6} A/cm{sup 2} at 77 K. The reproducibility is very good. X-ray diffraction spectra analysis in different geometries showedmore » epitaxial growth with the {ital c} axis normal to the film surface.« less