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Title: Fabrication and electromechanical properties of a self-actuating Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} microcantilever using a direct patternable sol-gel method

Abstract

The use of direct-patternable lead zirconate titanate (PZT) films produced using photosensitive stock solutions with ortho-nitrobenzaldehyde and UV (365 nm) irradiation has reached an advanced stage of application in microdetection systems. Electromechanical properties of direct patterned PZT microcantilevers on SiN{sub x}/Ta/Pt/PZT/Pt/SiO{sub 2} structure were measured by a laser vibrometer system as a function of cantilever length. The gravimetric sensitivity of cantilevers in air was characterized by Au deposition, and the mass detecting resolution was 38 Hz/ng. These results suggested a possibility that microelectromechanical systems may be fabricated relatively easily and without high cost processes, for example, by PZT dry etching.

Authors:
; ; ;  [1];  [2]
  1. Department of Ceramic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul 120-749 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
20778579
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 4; Other Information: DOI: 10.1063/1.2168261; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; AIR; DEPOSITION; ETCHING; FABRICATION; FERROELECTRIC MATERIALS; GRAVIMETRIC ANALYSIS; PLATINUM; PZT; SENSITIVITY; SILICON NITRIDES; SILICON OXIDES; SOL-GEL PROCESS; SOLUTIONS; TANTALUM; THIN FILMS; ULTRAVIOLET RADIATION

Citation Formats

Kang, Ghi Yuun, Bae, Sang-Woo, Park, Hyung-Ho, Kim, Tae Song, and Microsystem Research Center, KIST, Seoul 136-791. Fabrication and electromechanical properties of a self-actuating Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} microcantilever using a direct patternable sol-gel method. United States: N. p., 2006. Web. doi:10.1063/1.2168261.
Kang, Ghi Yuun, Bae, Sang-Woo, Park, Hyung-Ho, Kim, Tae Song, & Microsystem Research Center, KIST, Seoul 136-791. Fabrication and electromechanical properties of a self-actuating Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} microcantilever using a direct patternable sol-gel method. United States. doi:10.1063/1.2168261.
Kang, Ghi Yuun, Bae, Sang-Woo, Park, Hyung-Ho, Kim, Tae Song, and Microsystem Research Center, KIST, Seoul 136-791. Mon . "Fabrication and electromechanical properties of a self-actuating Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} microcantilever using a direct patternable sol-gel method". United States. doi:10.1063/1.2168261.
@article{osti_20778579,
title = {Fabrication and electromechanical properties of a self-actuating Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} microcantilever using a direct patternable sol-gel method},
author = {Kang, Ghi Yuun and Bae, Sang-Woo and Park, Hyung-Ho and Kim, Tae Song and Microsystem Research Center, KIST, Seoul 136-791},
abstractNote = {The use of direct-patternable lead zirconate titanate (PZT) films produced using photosensitive stock solutions with ortho-nitrobenzaldehyde and UV (365 nm) irradiation has reached an advanced stage of application in microdetection systems. Electromechanical properties of direct patterned PZT microcantilevers on SiN{sub x}/Ta/Pt/PZT/Pt/SiO{sub 2} structure were measured by a laser vibrometer system as a function of cantilever length. The gravimetric sensitivity of cantilevers in air was characterized by Au deposition, and the mass detecting resolution was 38 Hz/ng. These results suggested a possibility that microelectromechanical systems may be fabricated relatively easily and without high cost processes, for example, by PZT dry etching.},
doi = {10.1063/1.2168261},
journal = {Applied Physics Letters},
number = 4,
volume = 88,
place = {United States},
year = {Mon Jan 23 00:00:00 EST 2006},
month = {Mon Jan 23 00:00:00 EST 2006}
}
  • Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin film on Pt/RuO{sub 2} double electrode was successfully prepared by using new alkoxide{endash}alkanolamine, sol-gel method. It was observed that the use of Pt/RuO{sub 2} double electrode reduced leakage current, resulting in a marked improvement in the leakage characteristics and more reliable capacitors. Typical P-E hysteresis behavior was observed even at low applied voltage of 5 V, manifesting greatly improved remanance and coercivity. Fatigue and breakdown characteristic, measured at 5 V, showed stable behavior and no degradation in polarization was observed up to 10{sup 11} cycles.{copyright} {ital 1997 Materials Research Society.}
  • PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}/CoFe{sub 2}O{sub 4}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (PZT/CFO/LSMO) and PZT/LSMO heterostructures were grown on single-crystal MgO (100) substrates using the dual-laser ablation technique. X-ray diffraction confirmed the epitaxial relationship between the layers in the heterostructures. Magnetization measurements showed in-plane uniaxial magnetic anisotropy in PZT/CFO/LSMO with enhanced saturation magnetization of 288 emu/cm{sup 3} as compared to 244 emu/cm{sup 3} for PZT/LSMO. With the introduction of the hard magnetic CFO, the low coercivity of PZT/LSMO increased from 0.1 kOe to 1.4 kOe. Polarization measurements showed well-saturated square hysteresis loops for PZT/CFO/LSMO with enhanced remanent polarization (P{sub r}) values of 69 μC/cm{sup 2} atmore » a coercive field (E{sub c}) of 88 kV/cm as compared to P{sub r} = 51 μC/cm{sup 2} at E{sub c} = 39 kV/cm for PZT/LSMO. The improved hard ferromagnetic and ferroelectric properties in PZT/CFO/LSMO as compared to PZT/LSMO make it desirable for multiferroic device applications.« less
  • We deposited a thin epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) layer on the (0 0 1) SrTiO{sub 3} (STO) substrate doped with Nb (0.5 wt.%), then grew composite thin film of CoFe{sub 2}O{sub 4} (CFO) and PZT phases on it. X-ray diffraction and high resolution transmission electron microscopy showed that the PZT and CFO phases in the film had perfect epitaxial structures. CFO nanoparticles were embedded in PZT matrix randomly, which was useful to enhance the insulativity of the composite film. The composite thin film exhibited good ferromagnetic and ferroelectric properties. The dielectric constants of the composite thin film keptmore » unchangeable in a wide bias electric field, but increased in a magnetic field, namely, magnetodielectric effect. The possible reasons for the magnetodielectric effect were discussed.« less
  • Dopant compensation mechanism of sol-gel derived Pb(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} or PZT thin films with 2-5 mole percent niobium (Nb) dopant was studied. Transmission electron microscopy (TEM) showed that the Nb-doped composition batched according to the Ti vacancy-model, was single phase. This indicated that niobium donors were compensated by titanium vacancies at the B-site. The beneficial effect of donors in single phase composition and detrimental effects of grain boundary second phases and acceptors on the leakage currents are reported. The single phase Nb-doped (5%) PZT thin film exhibited a low leakage current of 1 x 10{sup -7} A/cm{sup 2} atmore » 1.2 MV/cm and a high breakdown strength of 3 MV/cm. Additionally, the logarithmic plot of steady state conductivity versus the reciprocal of temperature (T), exhibited a change in the activation energy at 155{degrees} C. The activation energies of 1.2 eV at T >155{degrees} C and 0.1 - 0.2 eV at T < 155{degrees} C for the steady state conductivity were observed in Nb doped PZT thin films.« less