Transparent indium zinc oxide top cathode prepared by plasma damage-free sputtering for top-emitting organic light-emitting diodes
- School of Advanced Materials and Systems Engineering, Kumoh National Institute of Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk 730-701 (Korea, Republic of)
We report on plasma damage-free sputtering of an indium zinc oxide (IZO) top cathode layer for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6 {omega}/cm and average transmittance above 88% in visible range were obtained even in IZO layers deposited by BCS at room temperature. The TOLED with the IZO top cathode layer shows electrical characteristics and lifetime comparable to a TOLED with only thermally evaporated Mg-Ag cathode. In particular, it is shown that the TOLED with the IZO top cathode film shows very low leakage current density of 1x10{sup -5} mA cm{sup 2} at reverse bias of -6 V. This suggests that there is no plasma damage caused by the bombardment of energetic particles during IZO sputtering using the BCS system.
- OSTI ID:
- 20778521
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 1; Other Information: DOI: 10.1063/1.2159577; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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