Formation of (111) nanotwin lamellae hillocks in polycrystalline silicon thin films caused by deposition of silicon dioxide layer
- System Solutions Planning Department, Electronic Components and Devices, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri, Nara 632-8567 (Japan)
Plasma-enhanced chemical vapor deposition was used to deposit layers of tetraethylorthosilicate at different temperatures. In the case of low-temperature deposition (300 deg. C), the deposited film surface was smooth and the major surface defects of the polycrystalline silicon (poly-silicon) film surface were grooves of grain boundaries. In contrast, in the case of high-temperature deposition (500 deg. C), the deposited silicon oxide surface exhibited hillocks, and these hillocks were derived from the top end of inclined silicon (111) where protruding nanotwin lamellae penetrated the poly-silicon thin film. The observed hillocks stemming from nanotwin lamellae could have been formed by compressive stress during high-temperature silicon dioxide deposition.
- OSTI ID:
- 20778509
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 2; Other Information: DOI: 10.1063/1.2162681; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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