Investigation of room temperature electrical resistivities of LaNiO{sub 3-{delta}} thin films deposited by rf magnetron sputtering and high oxygen-pressure processing
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083 (China)
Highly (100)-oriented electrically conductive LaNiO{sub 3-{delta}} (LNO) thin film with perovskite-type structure was deposited on Si(100) substrates by rf magnetron sputtering at substrate temperatures of 200, 300, 450, and 600 deg.C with a series of 0%, 20%, 40%, and 60% oxygen partial pressures, respectively. The room temperature (RT) resistivity of LNO films decreases with decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature. The lowest RT resistivity of as-sputtered LNO thin films was about 5.3x10{sup -4} {omega} cm. This value could be as low as {approx}1.55x10{sup -4} {omega} cm by postprocessing called high oxygen-pressure processing at 8 MPa and is comparable to the lowest one, 1.5x10{sup -4} {omega} cm, of epitaxial LNO thin film deposited on lattice-matched SrTiO{sub 3}, LaAlO{sub 3}, or sapphire single-crystal substrates.
- OSTI ID:
- 20777349
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 4; Other Information: DOI: 10.1116/1.2198867; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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