Effect of Cl{sub 2}/Ar gas mixing ratio on (Pb,Sr)TiO{sub 3} thin film etching behavior in inductively coupled plasma
- School of Electrical and Electronics Engineering, Chung-Ang University, 221 Huksuk-Dong, Dongjak-Gu, Seoul 156-756 (Korea, Republic of)
The development of anisotropic etching process for (Pb,Sr)TiO{sub 3} (PST) thin films is an important task to provide a small feature size and an accurate pattern transfer. Etching characteristics of PST thin films were investigated using inductively coupled plasma etching system as functions of Cl{sub 2}/Ar gas mixing ratio. The PST etch rate increased with the increase of chlorine radical and ion energy intensity. It was found that the increasing of Ar content in gas mixture lead to sufficient increasing of etch rate. The maximum etch rate of PST film is 56.2 nm/min at Cl{sub 2}/(Cl{sub 2}+Ar) of 0.2. It was proposed that the sputter etching is a dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.
- OSTI ID:
- 20777338
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 4; Other Information: DOI: 10.1116/1.2187989; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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