Modeling of InAs/GaAs self-assembled heterostructures: Quantum dot to quantum ring transformation

Journal Article · Sat Jul 15 00:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2174019· OSTI ID:20777316

Filikhin, I; Vlahovic, B; Deyneka, E ^[1]

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1. Department of Physics, North Carolina Central University, Durham, North Carolina 27707 (United States)

A single subband model for InAs/GaAs quantum dots (QDs) and quantum rings (QRs), where the energy dependence of the electron effective mass is defined by the Kane formula, is used. Model assumptions lead to the nonlinear Schroedinger equation in a three-dimensional space. Geometrical parameters of the model are based on the fabrication of QRs from a QD procedure for which the experimental capacitance-gate voltage (CV) data are available. The confinement state energies of QDs (QRs) are calculated. Obtained results for single electron energy levels reveal a good agreement with the CV spectroscopy experiments.

• OSTI ID: 20777316
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 4; Other Information: DOI: 10.1116/1.2174019; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
EFFECTIVE MASS
ELECTRIC POTENTIAL
ELECTRONS
ENERGY DEPENDENCE
ENERGY LEVELS
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
NONLINEAR PROBLEMS
QUANTUM DOTS
SCHROEDINGER EQUATION
SIMULATION
SPECTROSCOPY
THREE-DIMENSIONAL CALCULATIONS
TRANSFORMATIONS