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Title: Measurements of TiO{sub x} stress induced on InP/InGaAs/InGaAsP quantum well heterostructures

Abstract

Measurements of stress induced by TiO{sub x} layers on single quantum well InP based heterostructure are presented. Strain characterization has been performed by photoluminescence (PL) and micro-Raman spectroscopy. We present a comparison of the stress induced by TiO{sub x} and SiO{sub 2} layers which are commonly used as masking material for the quantum well intermixing process. Micro-Raman spectroscopy and PL revealed that TiO{sub 2} is creating a stress field in the top layers of the heterostructure, with a dependence on temperature and stressor thickness. A hysteresis phenomenon of the Raman shift has also been observed after measurements at low temperature (below 300 K) which shows that the stress created by TiO{sub x} exceeds the elastic limit of InP. On the other hand, there is no evidence that SiO{sub 2} is inducing stress. Rapid thermal annealing of samples covered with titanium oxide results in improvement of the thermal stability.

Authors:
; ; ;  [1];  [2]
  1. Centre de recherche en Nanofabrication et en Nanocaracterisation, Universite de Sherbrooke, 2500 Boulevard de l'Universite Sherbrooke, Quebec J1K 2R1 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
20777199
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 3; Other Information: DOI: 10.1116/1.2172925; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MASKING; PHOTOLUMINESCENCE; QUANTUM WELLS; RAMAN SPECTROSCOPY; SILICON OXIDES; STRAINS; STRESSES; TEMPERATURE RANGE 0065-0273 K; TITANIUM OXIDES

Citation Formats

Francois, A., Aimez, V., Beauvais, J., Barba, D., and INRS-EMT, 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2. Measurements of TiO{sub x} stress induced on InP/InGaAs/InGaAsP quantum well heterostructures. United States: N. p., 2006. Web. doi:10.1116/1.2172925.
Francois, A., Aimez, V., Beauvais, J., Barba, D., & INRS-EMT, 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2. Measurements of TiO{sub x} stress induced on InP/InGaAs/InGaAsP quantum well heterostructures. United States. doi:10.1116/1.2172925.
Francois, A., Aimez, V., Beauvais, J., Barba, D., and INRS-EMT, 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2. Mon . "Measurements of TiO{sub x} stress induced on InP/InGaAs/InGaAsP quantum well heterostructures". United States. doi:10.1116/1.2172925.
@article{osti_20777199,
title = {Measurements of TiO{sub x} stress induced on InP/InGaAs/InGaAsP quantum well heterostructures},
author = {Francois, A. and Aimez, V. and Beauvais, J. and Barba, D. and INRS-EMT, 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2},
abstractNote = {Measurements of stress induced by TiO{sub x} layers on single quantum well InP based heterostructure are presented. Strain characterization has been performed by photoluminescence (PL) and micro-Raman spectroscopy. We present a comparison of the stress induced by TiO{sub x} and SiO{sub 2} layers which are commonly used as masking material for the quantum well intermixing process. Micro-Raman spectroscopy and PL revealed that TiO{sub 2} is creating a stress field in the top layers of the heterostructure, with a dependence on temperature and stressor thickness. A hysteresis phenomenon of the Raman shift has also been observed after measurements at low temperature (below 300 K) which shows that the stress created by TiO{sub x} exceeds the elastic limit of InP. On the other hand, there is no evidence that SiO{sub 2} is inducing stress. Rapid thermal annealing of samples covered with titanium oxide results in improvement of the thermal stability.},
doi = {10.1116/1.2172925},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 3,
volume = 24,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2006},
month = {Mon May 15 00:00:00 EDT 2006}
}