Measurements of TiO{sub x} stress induced on InP/InGaAs/InGaAsP quantum well heterostructures
- Centre de recherche en Nanofabrication et en Nanocaracterisation, Universite de Sherbrooke, 2500 Boulevard de l'Universite Sherbrooke, Quebec J1K 2R1 (Canada)
Measurements of stress induced by TiO{sub x} layers on single quantum well InP based heterostructure are presented. Strain characterization has been performed by photoluminescence (PL) and micro-Raman spectroscopy. We present a comparison of the stress induced by TiO{sub x} and SiO{sub 2} layers which are commonly used as masking material for the quantum well intermixing process. Micro-Raman spectroscopy and PL revealed that TiO{sub 2} is creating a stress field in the top layers of the heterostructure, with a dependence on temperature and stressor thickness. A hysteresis phenomenon of the Raman shift has also been observed after measurements at low temperature (below 300 K) which shows that the stress created by TiO{sub x} exceeds the elastic limit of InP. On the other hand, there is no evidence that SiO{sub 2} is inducing stress. Rapid thermal annealing of samples covered with titanium oxide results in improvement of the thermal stability.
- OSTI ID:
- 20777199
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 3; Other Information: DOI: 10.1116/1.2172925; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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