Nonlinear Evolution of Surface Morphology in InAs/AlAs Superlattices via Surface Diffusion

Journal Article · Fri Apr 07 00:00:00 EDT 2006 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.96.136102· OSTI ID:20777135

Caha, O ^[1]; Holy, V ^[2]; Bassler, Kevin E ^[3]

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1. Institute of Condensed Matter Physics, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic)
2. Department of Electronic Structures, Charles University, Prague (Czech Republic)
3. Department of Physics, University of Houston, Houston, Texas 77204-5005 (United States)

Continuum simulations of self-organized lateral compositional modulation growth in InAs/AlAs short-period superlattices on InP substrate are presented. The results of the simulations correspond quantitatively to the results of synchrotron x-ray diffraction experiments. The time evolution of the compositional modulation during epitaxial growth can be explained only including a nonlinear dependence of the elastic energy of the growing epitaxial layer on its thickness. From the fit of the experimental data to the growth simulations we have determined the parameters of this nonlinear dependence. It was found that the modulation amplitude does not depend on the values of the surface diffusion constants of particular elements.

• OSTI ID: 20777135
• Journal Information: Physical Review Letters, Vol. 96, Issue 13; Other Information: DOI: 10.1103/PhysRevLett.96.136102; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
DIFFUSION
EVOLUTION
EXPERIMENTAL DATA
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MODULATION
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NONLINEAR PROBLEMS
SEMICONDUCTOR MATERIALS
SIMULATION
SUBSTRATES
SUPERLATTICES
THICKNESS
X-RAY DIFFRACTION