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Title: Transparent conductive Cd{sub 3}TeO{sub 6} thin films with perovskite structure

Abstract

Transparent conductive Cd{sub 3}TeO{sub 6} thin films were deposited by radio-frequency magnetron sputtering using a target composed of CdO and TeO{sub 2} powders, and these films' electrical and optical properties were examined. The electrical resistivity of 1.9x10{sup -2} {omega} cm and an average transmittance above 85% in the visible region (400-800 nm) were obtained after annealing the film at 500 deg. C. The film's carrier density and Hall mobility were 8.7x10{sup 19} cm{sup -3} and 6.8 cm{sup 2} V{sup -1} s{sup -1}, respectively. The absorption edge of the films was shifted to a lower wavelength by increasing the carrier density. The maximum band gap of these films was found to be 3.69 eV.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20777056
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 2; Other Information: DOI: 10.1116/1.2172950; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ANNEALING; CADMIUM OXIDES; CARRIER DENSITY; DEPOSITION; ELECTRIC CONDUCTIVITY; EV RANGE 01-10; MAGNETRONS; MOBILITY; OPTICAL PROPERTIES; PEROVSKITE; POWDERS; RADIOWAVE RADIATION; TELLURIUM OXIDES; THIN FILMS; VISIBLE SPECTRA

Citation Formats

Tetsuka, Hiroyuki, Shan Yuejin, Tezuka, Keitaro, Imoto, Hideo, Wasa, Kiyotaka, and Faculty of Science, Yokohama City University, 2-7-27 Chiyogaoka, Nara 631-0045. Transparent conductive Cd{sub 3}TeO{sub 6} thin films with perovskite structure. United States: N. p., 2006. Web. doi:10.1116/1.2172950.
Tetsuka, Hiroyuki, Shan Yuejin, Tezuka, Keitaro, Imoto, Hideo, Wasa, Kiyotaka, & Faculty of Science, Yokohama City University, 2-7-27 Chiyogaoka, Nara 631-0045. Transparent conductive Cd{sub 3}TeO{sub 6} thin films with perovskite structure. United States. doi:10.1116/1.2172950.
Tetsuka, Hiroyuki, Shan Yuejin, Tezuka, Keitaro, Imoto, Hideo, Wasa, Kiyotaka, and Faculty of Science, Yokohama City University, 2-7-27 Chiyogaoka, Nara 631-0045. Wed . "Transparent conductive Cd{sub 3}TeO{sub 6} thin films with perovskite structure". United States. doi:10.1116/1.2172950.
@article{osti_20777056,
title = {Transparent conductive Cd{sub 3}TeO{sub 6} thin films with perovskite structure},
author = {Tetsuka, Hiroyuki and Shan Yuejin and Tezuka, Keitaro and Imoto, Hideo and Wasa, Kiyotaka and Faculty of Science, Yokohama City University, 2-7-27 Chiyogaoka, Nara 631-0045},
abstractNote = {Transparent conductive Cd{sub 3}TeO{sub 6} thin films were deposited by radio-frequency magnetron sputtering using a target composed of CdO and TeO{sub 2} powders, and these films' electrical and optical properties were examined. The electrical resistivity of 1.9x10{sup -2} {omega} cm and an average transmittance above 85% in the visible region (400-800 nm) were obtained after annealing the film at 500 deg. C. The film's carrier density and Hall mobility were 8.7x10{sup 19} cm{sup -3} and 6.8 cm{sup 2} V{sup -1} s{sup -1}, respectively. The absorption edge of the films was shifted to a lower wavelength by increasing the carrier density. The maximum band gap of these films was found to be 3.69 eV.},
doi = {10.1116/1.2172950},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 24,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}
  • Polycrystalline Cd{sub 3-x-y}Cu {sub x} A {sub y}TeO{sub 6} (A = Li, Na) samples were prepared by solid-state reaction, and their crystal structure and electrical properties were investigated. In Cd{sub 3-x}Cu {sub x}TeO{sub 6} and Cd{sub 3-y} A {sub y}TeO{sub 6} (A = Li, Na), the maxim solubility of x and y was 0.15 and 0.15 for A = Li, 0.05 for A = Na, respectively. For co-substituted samples Cd{sub 2.9-y}Cu{sub 0.1}Li {sub y}TeO{sub 6} and Cd{sub 2.9-y}Cu{sub 0.1}Na {sub y}TeO{sub 6}, the maxim solubility of x was the same as single substitution above-mentioned. The alkali-metal substituted samples Cd{sub 3-y}more » A {sub y}TeO{sub 6} (A = Li, Na) showed a negative Seebeck coefficient, which indicates that the major conduction carriers are electron. On the other hand, the co-substituted samples Cd{sub 2.9-y}Cu{sub 0.1} A {sub y}TeO{sub 6} (A = Li, Na) represented a positive Seebeck coefficient, and major conduction carriers were hole through substitution by copper ions.« less
  • Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs{sub 7}Sm{sub 11}[TeO{sub 3}]{sub 12}Cl{sub 16} (I) and Rb{sub 7}Nd{sub 11}[TeO{sub 3}]{sub 12}Br{sub 16} (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn{sub 11}(TeO{sub 3}){sub 12}] and [M{sub 6}X{sub 16}] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. -more » Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.« less
  • A novel high mobility transparent conductive oxide thin film, tungsten-doped indium oxide (IWO), has been successfully grown on conventional glass substrates by reactive direct current magnetron sputtering technique from a metallic target. Analyses of x-ray photoelectron spectroscopy and x-ray diffraction reveal that tetravalent and hexavalent tungsten ions substitute for trivalent host indium ions without changing the crystalline structure of In{sub 2}O{sub 3}. IWO thin films were grown with resistivity of 4.4x10{sup -4} {omega} cm, carrier mobility of 52.8 cm{sup 2} V{sup -1} S{sup -1}; transmittance exceeding 80% at wavelengths between 380 and 900 nm, and average roughness of 7.5 nm.
  • We measured the photoconductivity of transparent semiconductor BaSnO{sub 3} and compared it with that of SrTiO{sub 3}. Epitaxial BaSnO{sub 3} and SrTiO{sub 3} films were grown on MgO substrates to exclude any contribution to photoconductivity from the substrate due to its large bandgap. In spite of the same perovskite structure and similar bandgap sizes (3.1–3.2 eV), the photoconductive behaviors of the two materials are quite different in terms of their magnitude and time dependence. The photoconductivity of BaSnO{sub 3} persists for many hours after removal from light exposure, whereas the photoconductivity of SrTiO{sub 3} shows little persistent conductivity. In addition, themore » photoconductivity of BaSnO{sub 3} increases to a value over 25 times higher than that of SrTiO{sub 3}, after 3 h of illuminations. The spectral photoconductive responses of both BaSnO{sub 3} and SrTiO{sub 3} show their highest peaks below 400 nm, suggesting that the electron-hole pair generation is the main mechanism of the photoconductivity for the both materials. The large persistent photoconductivity of BaSnO{sub 3} seems related with deep level defects with relatively large barriers for charge trapping and detrapping.« less
  • The cation ordering in the fluorite-like transparent conductors In{sub 4+} {sub x} Sn{sub 3-2} {sub x} Sb {sub x} O{sub 12} and In{sub 6}TeO{sub 12}, was investigated by Time of Flight Neutron Powder Diffraction and X-ray Powder Diffraction (tellurate). The structural results including atomic positions, cation distributions, metal-oxygen distances and metal-oxygen-metal angles point to a progressive cation ordering on both sites of the Tb{sub 7}O{sub 12}-type structure with a strong preference of the smaller 4d {sup 10} cations (Sn{sup 4+}, Sb{sup 5+}, Te{sup 6+}) for the octahedral sites. The corresponding increase of the overall structure-bonding anisotropy is analyzed in termsmore » of the crystal chemical properties of the OM {sub 4} tetrahedral network of the antistructure. The relationships between the M {sub 7}O{sub 12} and the M {sub 2}O{sub 3} bixbyite-type structures are explored. Within the whole series of compositions In{sub 4+} {sub x}M {sub 3-} {sub x} O{sub 12} (M=Sn, Sb, Te) there exists an increase of the symmetry gap between the more symmetrical bixbyite structure and the M {sub 7}O{sub 12} type. This is tentatively correlated with the progressive weakening of thermal stability of these compositions from Sn to Te via Sb. - Graphical abstract: Hexagonal cell of the fluorite-like oxygen-deficient M {sub 7}O{sub 12} structure: symmetrical octahedra and distorted sevenfold-coordinated polyhedra are shown.« less