Structure of surface reaction layer of poly-Si etched by fluorocarbon plasma

Journal Article · Wed Mar 15 00:00:00 EST 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2167972· OSTI ID:20777045

Kurihara, Kazuaki; Egami, Akihiko; Nakamura, Moritaka ^[1]

---

1. Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

A structure of surface reaction layer of poly-Si substrate during fluorocarbon plasma etching was studied by using a plasma beam irradiation apparatus and a quasi-in situ x-ray photoelectron spectroscopy. A fluorinated silicon (SiF) layer was formed under a fluorocarbon (CF) layer. It was found that the thickness of the SiF layer linearly increased with the etch yield of poly-Si regardless of the change of the CF layer thickness. The average ratio of the number of Si to that of F in the SiF layer did not strongly depend on the etch yield. The carbon-rich region of the CF layer was formed just above the SiF layer due to the consumption of fluorine for the formation of SiF layer.

• OSTI ID: 20777045
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 2; Other Information: DOI: 10.1116/1.2167972; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
ETCHING
FLUORINE
IRRADIATION
LAYERS
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
THICKNESS
WALL EFFECTS
X-RAY PHOTOELECTRON SPECTROSCOPY
YIELDS