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Title: Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition

Abstract

SiO{sub x}N{sub y} thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiO{sub x} was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiO{sub x} films were investigated by selecting appropriate sintering condition regimes of Si and SiO{sub 2} mixed powders. The SiO{sub x}N{sub y} thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm{sup 3}/m{sup 2} day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N{sub 2} partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation.

Authors:
; ; ; ; ;  [1];  [2];  [2];  [2];  [2]
  1. Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20777042
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 2; Other Information: DOI: 10.1116/1.2165659; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; EVAPORATION; ION BEAMS; IRRADIATION; NITRIFICATION; NITROGEN; NITROGEN IONS; OXYGEN; PARTIAL PRESSURE; PERFORMANCE; POLYETHYLENES; POWDERS; SILICA; SILICON OXIDES; SINTERING; SUBSTRATES; THIN FILMS

Citation Formats

Kobayashi, T., Nakano, Y., Ogawa, M., Hashimoto, R., Kamikawa, S., Itoh, Y., Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515, Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553, Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014, and Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555. Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition. United States: N. p., 2006. Web. doi:10.1116/1.2165659.
Kobayashi, T., Nakano, Y., Ogawa, M., Hashimoto, R., Kamikawa, S., Itoh, Y., Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515, Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553, Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014, & Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555. Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition. United States. doi:10.1116/1.2165659.
Kobayashi, T., Nakano, Y., Ogawa, M., Hashimoto, R., Kamikawa, S., Itoh, Y., Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515, Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553, Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014, and Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555. Wed . "Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition". United States. doi:10.1116/1.2165659.
@article{osti_20777042,
title = {Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition},
author = {Kobayashi, T. and Nakano, Y. and Ogawa, M. and Hashimoto, R. and Kamikawa, S. and Itoh, Y. and Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515 and Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553 and Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014 and Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555},
abstractNote = {SiO{sub x}N{sub y} thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiO{sub x} was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiO{sub x} films were investigated by selecting appropriate sintering condition regimes of Si and SiO{sub 2} mixed powders. The SiO{sub x}N{sub y} thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm{sup 3}/m{sup 2} day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N{sub 2} partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation.},
doi = {10.1116/1.2165659},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 24,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}