skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition

Abstract

SiO{sub x}N{sub y} thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiO{sub x} was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiO{sub x} films were investigated by selecting appropriate sintering condition regimes of Si and SiO{sub 2} mixed powders. The SiO{sub x}N{sub y} thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm{sup 3}/m{sup 2} day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N{sub 2} partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation.

Authors:
; ; ; ; ;  [1];  [2];  [2];  [2];  [2]
  1. Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20777042
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 2; Other Information: DOI: 10.1116/1.2165659; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; EVAPORATION; ION BEAMS; IRRADIATION; NITRIFICATION; NITROGEN; NITROGEN IONS; OXYGEN; PARTIAL PRESSURE; PERFORMANCE; POLYETHYLENES; POWDERS; SILICA; SILICON OXIDES; SINTERING; SUBSTRATES; THIN FILMS

Citation Formats

Kobayashi, T., Nakano, Y., Ogawa, M., Hashimoto, R., Kamikawa, S., Itoh, Y., Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515, Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553, Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014, and Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555. Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition. United States: N. p., 2006. Web. doi:10.1116/1.2165659.
Kobayashi, T., Nakano, Y., Ogawa, M., Hashimoto, R., Kamikawa, S., Itoh, Y., Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515, Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553, Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014, & Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555. Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition. United States. doi:10.1116/1.2165659.
Kobayashi, T., Nakano, Y., Ogawa, M., Hashimoto, R., Kamikawa, S., Itoh, Y., Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515, Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553, Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014, and Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555. Wed . "Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition". United States. doi:10.1116/1.2165659.
@article{osti_20777042,
title = {Effects of deposition conditions on gas-barrier performance of SiO{sub x}N{sub y} thin films formed via ion-beam-assisted vapor deposition},
author = {Kobayashi, T. and Nakano, Y. and Ogawa, M. and Hashimoto, R. and Kamikawa, S. and Itoh, Y. and Mitsubishi Heavy Industries, Ltd., Advanced Technology Research Center 8-I, Sachiura 1-chome, Kanazawa-ku, Yokohama 236-8515 and Mitsubishi Heavy Industries, Ltd., Hiroshima R and D Center, 4-6-22 Kan-on-shin-machi, Nishi-ku, Hiroshima 733-8553 and Mitsubishi-Hitachi Metals Machinery, Inc., 4-10-1 Shiba, Minato-ku, Tokyo 108-0014 and Kurume National College of Technology, 1-1-1 Komorino, Kurume, Fukuoka 830-8555},
abstractNote = {SiO{sub x}N{sub y} thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiO{sub x} was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiO{sub x} films were investigated by selecting appropriate sintering condition regimes of Si and SiO{sub 2} mixed powders. The SiO{sub x}N{sub y} thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm{sup 3}/m{sup 2} day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N{sub 2} partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation.},
doi = {10.1116/1.2165659},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 2,
volume = 24,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}
  • The nucleation and growth of WN{sub x}C{sub y} films deposited by atomic layer deposition (ALD) on plasma enhanced chemical vapor deposited (PECVD) SiO{sub 2} is characterized as a function of the number of ALD cycles using transmission electron microscopy analysis. The island growth of isolated WN{sub x}C{sub y} nanocrystals is directly observed at the early stages of film growth. The nucleation of the WN{sub x}C{sub y} film can be significantly enhanced by NH{sub 3} plasma treatment before the deposition of WN{sub x}C{sub y}. The capacitance-voltage measurements conducted after bias-temperature stressing reveals that an ALD-WN{sub x}C{sub y} film deposited with amore » thickness of approximately 5.2 nm on the NH{sub 3} plasma-treated PECVD SiO{sub 2} shows good diffusion barrier performance against Cu migration.« less
  • Microstructure and optical properties of Al{sub x}Ga{sub 1-x}N/GaN heterostructures thin films grown on Si(111) substrate by Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD) were investigated. The surface morphology and crystal orientation of the films were determined by scanning electron microscope (SEM) and X-ray diffractometer (XRD), respectively. The content of Al in Al{sub x}Ga{sub 1-x}N films (x) was determined by means of NIR-UV visible optical reflectance spectroscope. The surface morphology of films depends significantly on the content of Al. Films with higher value of x showed the smaller grain size and the smoother surface. Films with x = 0.29 and x =more » 0.36 showed crystal orientation of (101-bar0) plane, while films with x = 0.12 have two crystal orientation of (101-bar0) and (101-bar1)planes. The optical reflectance spectra showed that the ordered of oscillation depend on the smoothness of the film surface, while the number of oscillation related to the thickness of films. The calculated band gap was 3.34 eV for GaN and in the range of 3.34 to 6.20 eV for Al{sub x}Ga{sub 1-x}N depending on the x values.« less
  • The rugate filter employs a sinusoidal refractive index depth profile to produce high reflection in a narrow band of wavelengths. Fabrication relies on a continuously variable index of refraction in the wavelength regime of interest. The near IR refractive index of amorphous silicon--nitrogen films decreases continuously as the composition varies from pure silicon to stoichiometric silicon nitride (Si/sub 3/N/sub 4/). Ion implantation was found unsuitable as a fabrication method for rugate filters. Homogeneous and inhomogeneous films up to 5 /mu/m in thickness have been produced by simultaneous deposition of electron beam evaporated silicon and of energetic nitrogen particles arising frommore » an ion beam. The relative fluxes of beam and evaporant are found to determine the ratio of nitrogen to silicon in the films and therefore to determine the index. Single-band reflection filters of the rugate design of high peak optical density were fabricated under computer control using a quartz crystal oscillator shielded from the beam to monitor the silicon evaporation and three suppressed Faraday cups to monitor the ion beam current.« less
  • Thin Ti films sputter deposited onto single-crystal Si, thermal SiO/sub 2/, and low-pressure chemical vapor deposited Si/sub 3/N/sub 4/ and SiO/sub x/N/sub y/ (xapprox. =yapprox. =1) substrates have been rapid thermal annealed in N/sub 2/ or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSi/sub x/, TiO/sub x/, delta-TiN, or TiN/sub x/O/sub 1/..sqrt../sub x/. The results are discussed in light of published Ti-Si-O and Ti-Si-Nmore » phase diagrams.« less
  • The influence of N{sub 2}O gas addition on the properties of zinc oxide (ZnO) films grown on a-plane (11–20) sapphire (a-Al{sub 2}O{sub 3}) substrates was investigated, using a chemical vapor deposition method based on the reaction between dimethylzinc and high-temperature H{sub 2}O produced by a catalytic H{sub 2}-O{sub 2} reaction on platinum (Pt) nanoparticles. The addition of N{sub 2}O was found to increase the size of the crystalline facets and to improve the crystal orientation along the c-axis. The electron mobility at 290 K was also increased to 234 cm{sup 2}/Vs following the addition of N{sub 2}O gas at a pressure ofmore » 3.2 × 10{sup −3 }Pa. In addition, the minimum full width at half maximum of the most intense photoluminescence peak derived from neutral donor bound excitons at 10 K decreased to 0.6 meV by the addition of N{sub 2}O gas at a pressure of 3.1 × 10{sup −2 }Pa.« less