c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind
- Siemens AG, Corporate Technology, Otto-Hahn-Ring 6, 81739 Munich (Germany)
This article reports on the growth and characterization of polycrystalline ZnO films having c axis inclined up to 16 deg. with respect to the substrate normal. These films allow the excitation of shear and longitudinal waves with comparable electromechanical coupling constants and are of significant interest for thin film bulk acoustic resonators (FBARs). The films are deposited on silicon substrates covered by Al{sub 2}O{sub 3} and SiO{sub 2} buffer layers under low pressure using a modified reactive dc-pulsed magnetron sputtering system. A blind has been positioned between target and substrate, allowing oblique particle incidence without tilting the wafer. The study of structural properties of the deposited ZnO films by x-ray diffraction and scanning electron microscopy has permitted to show the presence of the inclined structure. Electromechanical coupling constants K up to 13% have been extracted for shear-mode excitation using highly overmoded FBARs.
- OSTI ID:
- 20777041
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 2; Other Information: DOI: 10.1116/1.2165658; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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