Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

Journal Article · Fri Jan 27 00:00:00 EST 2006 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.96.037404· OSTI ID:20776996

Pavlov, S G; Huebers, H -W; Hovenier, J N; Klaassen, T O; Carder, D A; Phillips, P J; Redlich, B; Riemann, H; Zhukavin, R Kh; Shastin, V N ^[1]

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1. Institute of Planetary Research, German Aerospace Center (DLR), 12489 Berlin (Germany)

Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon ({approx_equal}2.92 THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A{sub 1}) donor states (separation {approx_equal}2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

• OSTI ID: 20776996
• Journal Information: Physical Review Letters, Vol. 96, Issue 3; Other Information: DOI: 10.1103/PhysRevLett.96.037404; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CRYSTALS
DOPED MATERIALS
FREE ELECTRON LASERS
IMPURITIES
PHONONS
PHOTONS
SEMICONDUCTOR MATERIALS
SILICON
STIMULATED EMISSION