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Title: Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

Abstract

Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS.

Authors:
; ;  [1];  [2];  [2]
  1. Production Engineering Research Laboratory, Canon Inc., Tokyo 146-8501 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20776950
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 1; Other Information: DOI: 10.1116/1.2134711; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DISTRIBUTION; ELECTRICAL PROPERTIES; INDIUM; INDIUM COMPOUNDS; MAGNETRONS; OXYGEN; SPUTTERING; STOICHIOMETRY; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN OXIDES

Citation Formats

Iwase, Hideo, Hoshi, Youichi, Kameyama, Makoto, Department of System Electronics and Information Technology, Tokyo Polytechnic University, Atsugi 243-0297, and Production Engineering, Research Laboratory, Canon Inc., Tokyo 146-8501. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system. United States: N. p., 2006. Web. doi:10.1116/1.2134711.
Iwase, Hideo, Hoshi, Youichi, Kameyama, Makoto, Department of System Electronics and Information Technology, Tokyo Polytechnic University, Atsugi 243-0297, & Production Engineering, Research Laboratory, Canon Inc., Tokyo 146-8501. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system. United States. doi:10.1116/1.2134711.
Iwase, Hideo, Hoshi, Youichi, Kameyama, Makoto, Department of System Electronics and Information Technology, Tokyo Polytechnic University, Atsugi 243-0297, and Production Engineering, Research Laboratory, Canon Inc., Tokyo 146-8501. Sun . "Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system". United States. doi:10.1116/1.2134711.
@article{osti_20776950,
title = {Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system},
author = {Iwase, Hideo and Hoshi, Youichi and Kameyama, Makoto and Department of System Electronics and Information Technology, Tokyo Polytechnic University, Atsugi 243-0297 and Production Engineering, Research Laboratory, Canon Inc., Tokyo 146-8501},
abstractNote = {Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS.},
doi = {10.1116/1.2134711},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 1,
volume = 24,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}
  • Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowestmore » resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.« less
  • Nb-doped anatase TiO{sub 2} films were deposited on unheated glass by dc magnetron sputtering using slightly reduced Nb-doped TiO{sub 2-x} targets (Nb concentration: 3.7 and 9.5 at. %) with various hydrogen or oxygen flow ratios. After postannealing in a vacuum (6x10{sup -4} Pa) at 500 deg. C for 1 h, both films were crystallized into the polycrystalline anatase TiO{sub 2} structure. The resistivity decreased from 1.6x10{sup -3} to 6.3x10{sup -4} {Omega} cm with increasing Nb concentration from 2.8 to 8.0 at. %, where the carrier density increased from 5.4x10{sup 20} to 2.0x10{sup 21} cm{sup -3} and the Hall mobility wasmore » almost constant at 5-7 cm{sup 2} V{sup -1} s{sup -1}. The films exhibited a high transparency of over 60%-80% in the visible region.« less
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