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Title: Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film

Abstract

The effects of plasma treatment using Ar, N{sub 2}, and O{sub 2} on the removal of crystallized HfO{sub 2} films in a dilute HF solution were studied. The resulting damage in source and drain regions, and recess in isolation regions were also investigated. It was found that plasma nitridation with an ion energy of several hundred electron volts can lower the wet etch resistance of crystallized HfO{sub 2} films up to 70 A thick through the generation of Hf-N bonds. However, thermal nitridation did not introduce sufficient nitrogen into bulk crystallized HfO{sub 2} films to lower wet etch resistance. Plasma nitridation without bias power introduced nitrogen to the crystallized HfO{sub 2} in the region only within 10 A of the surface. The enhancement of the etch rate of crystallized HfO{sub 2} in dilute HF and the amount of recess in the active and isolation regions using N{sub 2}, O{sub 2}, and Ar plasma treatment have been evaluated. Results show that N{sub 2} plasma treatment is the most effective in enhancing the removal rate of crystallized HfO{sub 2} in dilute HF and minimizing recess on substrate among the plasmas studied.

Authors:
; ;  [1]
  1. Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
Publication Date:
OSTI Identifier:
20776941
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 1; Other Information: DOI: 10.1116/1.2141619; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL BONDS; ETCHING; FILMS; HAFNIUM OXIDES; HYDROFLUORIC ACID; NITRIDATION; NITROGEN; PLASMA; SOLUTIONS; SUBSTRATES; SURFACES

Citation Formats

Chen Jinghao, Yoo, Won Jong, and Chan, Daniel S.H. Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film. United States: N. p., 2006. Web. doi:10.1116/1.2141619.
Chen Jinghao, Yoo, Won Jong, & Chan, Daniel S.H. Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film. United States. doi:10.1116/1.2141619.
Chen Jinghao, Yoo, Won Jong, and Chan, Daniel S.H. Sun . "Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film". United States. doi:10.1116/1.2141619.
@article{osti_20776941,
title = {Effects of N{sub 2}, O{sub 2}, and Ar plasma treatments on the removal of crystallized HfO{sub 2} film},
author = {Chen Jinghao and Yoo, Won Jong and Chan, Daniel S.H.},
abstractNote = {The effects of plasma treatment using Ar, N{sub 2}, and O{sub 2} on the removal of crystallized HfO{sub 2} films in a dilute HF solution were studied. The resulting damage in source and drain regions, and recess in isolation regions were also investigated. It was found that plasma nitridation with an ion energy of several hundred electron volts can lower the wet etch resistance of crystallized HfO{sub 2} films up to 70 A thick through the generation of Hf-N bonds. However, thermal nitridation did not introduce sufficient nitrogen into bulk crystallized HfO{sub 2} films to lower wet etch resistance. Plasma nitridation without bias power introduced nitrogen to the crystallized HfO{sub 2} in the region only within 10 A of the surface. The enhancement of the etch rate of crystallized HfO{sub 2} in dilute HF and the amount of recess in the active and isolation regions using N{sub 2}, O{sub 2}, and Ar plasma treatment have been evaluated. Results show that N{sub 2} plasma treatment is the most effective in enhancing the removal rate of crystallized HfO{sub 2} in dilute HF and minimizing recess on substrate among the plasmas studied.},
doi = {10.1116/1.2141619},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 1,
volume = 24,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}