skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode

Abstract

A reactive ac pulsed dual magnetron sputtering process for MgO thin-film deposition was equipped with a closed-loop control of the oxygen flow rate (F{sub O2}) using the 285 nm magnesium radiation as input. Owing to this control, most of the unstable part of the partial pressure versus flowrate curve became accessible. The process worked steadily and reproducible without arcing. A dynamic deposition rate of up to 35 nm m/min could be achieved, which was higher than in the oxide mode by about a factor of 18. Both process characteristics and film properties were investigated in this work in dependence on the oxygen flow, i.e., in dependence on the particular point within the transition region where the process is operated. The films had very low extinction coefficients (<5x10{sup -5}) and refractive indices close to the bulk value. They were nearly stoichiometric with a slight oxygen surplus (Mg/O=48/52) which was independent of the oxygen flow. X-ray diffraction revealed a prevailing (111) orientation. Provided that appropriate rf plasma etching was performed prior to deposition, no other than the (111) peak could be detected. The intensity of this peak increased with increasing F{sub O{sub 2}}, indicating an even more pronounced (111) texture. The ion-inducedmore » secondary electron emission coefficient (iSEEC) was distinctly correlated with the markedness of the (111) preferential orientation. Both refractive index and (111) preferred orientation (which determines the iSEEC) were found to be improved in comparison with the MgO growth in the fully oxide mode. Consequently, working in the transition mode is superior to the oxide mode not only with respect to the growth rate, but also to most important film properties.« less

Authors:
; ; ; ; ; ;  [1];  [2];  [3]
  1. Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz (Germany)
  2. (Germany)
  3. (United States)
Publication Date:
OSTI Identifier:
20776938
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 1; Other Information: DOI: 10.1116/1.2138717; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CLOSED-LOOP CONTROL; DEPOSITION; ELECTRON EMISSION; ETCHING; GRAIN ORIENTATION; MAGNESIUM; MAGNESIUM OXIDES; MAGNETRONS; OXYGEN; PARTIAL PRESSURE; REFRACTIVE INDEX; SPUTTERING; TEXTURE; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Kupfer, H., Kleinhempel, R., Richter, F., Peters, C., Krause, U., Kopte, T., Cheng, Y., Fraunhofer Institute for Electron Beam and Plasma Technology, D-01277 Dresden, and University of Texas at Arlington, Materials Science and Engineering, Arlington, Texas 76013. High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode. United States: N. p., 2006. Web. doi:10.1116/1.2138717.
Kupfer, H., Kleinhempel, R., Richter, F., Peters, C., Krause, U., Kopte, T., Cheng, Y., Fraunhofer Institute for Electron Beam and Plasma Technology, D-01277 Dresden, & University of Texas at Arlington, Materials Science and Engineering, Arlington, Texas 76013. High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode. United States. doi:10.1116/1.2138717.
Kupfer, H., Kleinhempel, R., Richter, F., Peters, C., Krause, U., Kopte, T., Cheng, Y., Fraunhofer Institute for Electron Beam and Plasma Technology, D-01277 Dresden, and University of Texas at Arlington, Materials Science and Engineering, Arlington, Texas 76013. Sun . "High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode". United States. doi:10.1116/1.2138717.
@article{osti_20776938,
title = {High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode},
author = {Kupfer, H. and Kleinhempel, R. and Richter, F. and Peters, C. and Krause, U. and Kopte, T. and Cheng, Y. and Fraunhofer Institute for Electron Beam and Plasma Technology, D-01277 Dresden and University of Texas at Arlington, Materials Science and Engineering, Arlington, Texas 76013},
abstractNote = {A reactive ac pulsed dual magnetron sputtering process for MgO thin-film deposition was equipped with a closed-loop control of the oxygen flow rate (F{sub O2}) using the 285 nm magnesium radiation as input. Owing to this control, most of the unstable part of the partial pressure versus flowrate curve became accessible. The process worked steadily and reproducible without arcing. A dynamic deposition rate of up to 35 nm m/min could be achieved, which was higher than in the oxide mode by about a factor of 18. Both process characteristics and film properties were investigated in this work in dependence on the oxygen flow, i.e., in dependence on the particular point within the transition region where the process is operated. The films had very low extinction coefficients (<5x10{sup -5}) and refractive indices close to the bulk value. They were nearly stoichiometric with a slight oxygen surplus (Mg/O=48/52) which was independent of the oxygen flow. X-ray diffraction revealed a prevailing (111) orientation. Provided that appropriate rf plasma etching was performed prior to deposition, no other than the (111) peak could be detected. The intensity of this peak increased with increasing F{sub O{sub 2}}, indicating an even more pronounced (111) texture. The ion-induced secondary electron emission coefficient (iSEEC) was distinctly correlated with the markedness of the (111) preferential orientation. Both refractive index and (111) preferred orientation (which determines the iSEEC) were found to be improved in comparison with the MgO growth in the fully oxide mode. Consequently, working in the transition mode is superior to the oxide mode not only with respect to the growth rate, but also to most important film properties.},
doi = {10.1116/1.2138717},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 1,
volume = 24,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}