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Title: Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

Abstract

A remote plasma atomic layer deposition (RPALD) method has been applied to grow a hafnium oxide thin film on the Si substrate. The deposition process was monitored by in situ XPS and the as-deposited structure and chemical bonding were examined by TEM and XPS. The in situ XPS measurement showed the presence of a hafnium silicate phase at the initial stage of the RPALD process up to the 20th cycle and indicated that no hafnium silicide was formed. The initial hafnium silicate was amorphous and grew to a thickness of approximately 2 nm. Based on these results and model reactions for silicate formation, we proposed an initial growth mechanism that includes adatom migration at nascent step edges. Density functional theory calculations on model compounds indicate that the hafnium silicate is thermodynamically favored over the hafnium silicide by as much as 250 kJ/mol.

Authors:
; ; ; ; ;  [1];  [2]
  1. Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
20776928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 26; Other Information: DOI: 10.1063/1.2150250; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL BONDS; CRYSTAL GROWTH; DENSITY FUNCTIONAL METHOD; DEPOSITION; HAFNIUM OXIDES; HAFNIUM SILICATES; HAFNIUM SILICIDES; LAYERS; PLASMA; SUBSTRATES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Won, Youngdo, Park, Sangwook, Koo, Jaehyoung, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag, and Division of Materials Science and Engineering, Hanyang University, Seoul 133-791. Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method. United States: N. p., 2005. Web. doi:10.1063/1.2150250.
Won, Youngdo, Park, Sangwook, Koo, Jaehyoung, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag, & Division of Materials Science and Engineering, Hanyang University, Seoul 133-791. Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method. United States. doi:10.1063/1.2150250.
Won, Youngdo, Park, Sangwook, Koo, Jaehyoung, Kim, Seokhoon, Kim, Jinwoo, Jeon, Hyeongtag, and Division of Materials Science and Engineering, Hanyang University, Seoul 133-791. Mon . "Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method". United States. doi:10.1063/1.2150250.
@article{osti_20776928,
title = {Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method},
author = {Won, Youngdo and Park, Sangwook and Koo, Jaehyoung and Kim, Seokhoon and Kim, Jinwoo and Jeon, Hyeongtag and Division of Materials Science and Engineering, Hanyang University, Seoul 133-791},
abstractNote = {A remote plasma atomic layer deposition (RPALD) method has been applied to grow a hafnium oxide thin film on the Si substrate. The deposition process was monitored by in situ XPS and the as-deposited structure and chemical bonding were examined by TEM and XPS. The in situ XPS measurement showed the presence of a hafnium silicate phase at the initial stage of the RPALD process up to the 20th cycle and indicated that no hafnium silicide was formed. The initial hafnium silicate was amorphous and grew to a thickness of approximately 2 nm. Based on these results and model reactions for silicate formation, we proposed an initial growth mechanism that includes adatom migration at nascent step edges. Density functional theory calculations on model compounds indicate that the hafnium silicate is thermodynamically favored over the hafnium silicide by as much as 250 kJ/mol.},
doi = {10.1063/1.2150250},
journal = {Applied Physics Letters},
number = 26,
volume = 87,
place = {United States},
year = {Mon Dec 26 00:00:00 EST 2005},
month = {Mon Dec 26 00:00:00 EST 2005}
}