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Title: Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer

Abstract

The CdTe/CdS solar cell devices were grown using a dry process consisting of sputtering for the transparent conducting oxide and CdS window layers, and close-space sublimation for CdTe absorber layer. These devices were back contacted using Mo/Sb{sub 2}Te{sub 3} sputtered layers following the CdCl{sub 2} activation process carried out in air. It was shown that when oxygen is intentionally introduced in the CdTe layer during its growth, this leads to a significant improvement in all the device parameters yielding an efficiency of 14% compared to 11.5% for devices fabricated in the same conditions but without intentional oxygen incorporation in CdTe. The data obtained were not altered following a light soaking. The devices were investigated by quantitative secondary ion mass spectrometry, which allowed insight into the distribution and amount of oxygen and chlorine within the entire device structure. Both impurities showed an increased concentration throughout the CdTe absorber layer.

Authors:
; ; ; ;  [1];  [2]
  1. Department of Physics, University of Durham, South Road, Durham, DH1 3LE (United Kingdom)
  2. (Italy)
Publication Date:
OSTI Identifier:
20776923
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 26; Other Information: DOI: 10.1063/1.2152108; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY TELLURIDES; CADMIUM CHLORIDES; CADMIUM SULFIDES; CADMIUM TELLURIDES; CHLORINE; DEPOSITION; IMPURITIES; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; MOLYBDENUM; OXIDES; OXYGEN; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SPUTTERING; SUBLIMATION; THIN FILMS; VISIBLE RADIATION

Citation Formats

Emziane, M., Durose, K., Halliday, D.P., Bosio, A., Romeo, N., and Department of Physics, University of Parma, Parco Area delle Scienze 7a, 43100 Parma. Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer. United States: N. p., 2005. Web. doi:10.1063/1.2152108.
Emziane, M., Durose, K., Halliday, D.P., Bosio, A., Romeo, N., & Department of Physics, University of Parma, Parco Area delle Scienze 7a, 43100 Parma. Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer. United States. doi:10.1063/1.2152108.
Emziane, M., Durose, K., Halliday, D.P., Bosio, A., Romeo, N., and Department of Physics, University of Parma, Parco Area delle Scienze 7a, 43100 Parma. Mon . "Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer". United States. doi:10.1063/1.2152108.
@article{osti_20776923,
title = {Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer},
author = {Emziane, M. and Durose, K. and Halliday, D.P. and Bosio, A. and Romeo, N. and Department of Physics, University of Parma, Parco Area delle Scienze 7a, 43100 Parma},
abstractNote = {The CdTe/CdS solar cell devices were grown using a dry process consisting of sputtering for the transparent conducting oxide and CdS window layers, and close-space sublimation for CdTe absorber layer. These devices were back contacted using Mo/Sb{sub 2}Te{sub 3} sputtered layers following the CdCl{sub 2} activation process carried out in air. It was shown that when oxygen is intentionally introduced in the CdTe layer during its growth, this leads to a significant improvement in all the device parameters yielding an efficiency of 14% compared to 11.5% for devices fabricated in the same conditions but without intentional oxygen incorporation in CdTe. The data obtained were not altered following a light soaking. The devices were investigated by quantitative secondary ion mass spectrometry, which allowed insight into the distribution and amount of oxygen and chlorine within the entire device structure. Both impurities showed an increased concentration throughout the CdTe absorber layer.},
doi = {10.1063/1.2152108},
journal = {Applied Physics Letters},
number = 26,
volume = 87,
place = {United States},
year = {Mon Dec 26 00:00:00 EST 2005},
month = {Mon Dec 26 00:00:00 EST 2005}
}