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Title: Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;  [1]
  1. Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712 (United States)
Publication Date:
OSTI Identifier:
20723219
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 23; Journal Issue: 6; Other Information: DOI: 10.1116/1.2091119; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL GROWTH; HEALTH HAZARDS; MAINTENANCE; MOLECULAR BEAM EPITAXY; OCCUPATIONAL SAFETY; PROTECTIVE CLOTHING; WORKING CONDITIONS

Citation Formats

Oye, Michael M., Ahn, J., Cao, C., Chen, H., Fordyce, W., Gazula, D., Govindaraju, S., Hurst, J.B., Lipson, S., Lu, D., Reifsnider, J.M., Shchekin, O., Sidhu, R., Sun, X., Deppe, D.G., Holmes, A.L. Jr., and Mattord, Terry J.. Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems. United States: N. p., 2005. Web. doi:10.1116/1.2091119.
Oye, Michael M., Ahn, J., Cao, C., Chen, H., Fordyce, W., Gazula, D., Govindaraju, S., Hurst, J.B., Lipson, S., Lu, D., Reifsnider, J.M., Shchekin, O., Sidhu, R., Sun, X., Deppe, D.G., Holmes, A.L. Jr., & Mattord, Terry J.. Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems. United States. doi:10.1116/1.2091119.
Oye, Michael M., Ahn, J., Cao, C., Chen, H., Fordyce, W., Gazula, D., Govindaraju, S., Hurst, J.B., Lipson, S., Lu, D., Reifsnider, J.M., Shchekin, O., Sidhu, R., Sun, X., Deppe, D.G., Holmes, A.L. Jr., and Mattord, Terry J.. Tue . "Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems". United States. doi:10.1116/1.2091119.
@article{osti_20723219,
title = {Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems},
author = {Oye, Michael M. and Ahn, J. and Cao, C. and Chen, H. and Fordyce, W. and Gazula, D. and Govindaraju, S. and Hurst, J.B. and Lipson, S. and Lu, D. and Reifsnider, J.M. and Shchekin, O. and Sidhu, R. and Sun, X. and Deppe, D.G. and Holmes, A.L. Jr. and Mattord, Terry J.},
abstractNote = {No abstract prepared.},
doi = {10.1116/1.2091119},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 6,
volume = 23,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}
  • Single crystal {gamma}-Al{sub 2}O{sub 3} thin films have been epitaxially grown by molecular beam epitaxy at 850 deg. C on Si(001) substrates. Reflection high energy electron diffraction and transmission electron microscopy experiments evidence the good crystalline quality of the Al{sub 2}O{sub 3} layer. The present study shows that the two first monolayers of {gamma}-Al{sub 2}O{sub 3} are (001) oriented and coherently strained on Si. For larger thickness, a transition from (001)- to (111)-oriented Al{sub 2}O{sub 3} occurs, together with the apparition of domains in the layer. In-plane epitaxial relationship between Al{sub 2}O{sub 3} and Si(001) are deduced from these observations.
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  • Enhanced diffusion of B is observed during the growth of ion bombarded epitaxial layers by Si molecular beam epitaxy. Ion-assisted methods are generally required for high levels of n-type doping, and we find that the damage caused by the low-level ion bombardment is responsible for the enhanced diffusion of B. Furthermore, the concentration profiles of as-grown and post-growth annealed samples show that the diffusion is a transient effect that occurs at the growth temperature of 600--700 /sup 0/C. Simulation of the diffusion process demonstrates that nearly all of the B is participating in the diffusion and that the built-in electricmore » field at the p-n junction leads to a further smearing of the B profile.« less
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