skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermal reaction of polycrystalline AlN with XeF{sub 2}

Abstract

Detailed studies on the thermal reaction behavior of polycrystalline aluminum nitride (AlN) with effusive xenon difluoride (XeF{sub 2}) have been carried out over the sample temperature (T{sub s}) range from 300 to 920 K using molecular beam mass spectrometry combined with a time-of-flight technique and ex situ surface analyses, i.e., X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy (SEM). The species desorbed from the AlN/XeF{sub 2} system were monitored using molecular beam mass spectrometry, as a function of sample temperature. Above T{sub s}=800 K, the desorbed reaction products were identified as N{sub 2} and AlF{sub 3}, and their flux intensities increase monotonically as the sample temperature is increased. The flux intensity of XeF{sub 2} desorbed after physisorption to the AlN surface is found to decrease as T{sub s} is raised above T{sub s}=800 K, and approximately one half of the incoming XeF{sub 2} is consumed by the thermal reaction at 920 K. The results of surface analyses show that the thermal reaction of AlN with XeF{sub 2} starts at approximately T{sub s}=700 K, forming a reaction layer composed of AlF{sub 3}. The AlF{sub 3} layer becomes thick as T{sub s} is increased from T{sub s}=700-800 K. Above T{submore » s}=800 K, however, as a result of fast desorption of AlF{sub 3} and F atoms from the AlF{sub 3} layer, only partially fluorinated AlF{sub x} (x=1 and/or 2) layers are formed and the bulk AlN is revealed again. The SEM photographs indicate that the surfaces exposed above T{sub s}=850 K are strongly etched but a slight change is observed at T{sub s}{<=}800 K. On the basis of these results, three reaction stages are proposed for the AlN/XeF{sub 2} reaction depending on the sample temperature range: Stage 1 (300{<=}T{sub s}<700 K); no reaction, stage 2 (700{<=}T{sub s}<800 K); surface fluorination, and stage 3 (800{<=}T{sub s}); etching. At stage 3, AlF{sub 3} formed on the surface starts to evaporate and fast etching proceeds, since the vapor pressure of AlF{sub 3} is high enough in this temperature range.« less

Authors:
; ; ; ; ; ; ; ;  [1];  [2]
  1. Materials Research Laboratory, NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20723212
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 23; Journal Issue: 6; Other Information: DOI: 10.1116/1.2110395; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ALUMINIUM FLUORIDES; ALUMINIUM NITRIDES; AUGER ELECTRON SPECTROSCOPY; DESORPTION; ETCHING; FLUORINATION; LAYERS; MASS SPECTROSCOPY; MOLECULAR BEAMS; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMAL ANALYSIS; TIME-OF-FLIGHT METHOD; VAPOR PRESSURE; X-RAY PHOTOELECTRON SPECTROSCOPY; XENON FLUORIDES

Citation Formats

Watanabe, Morimichi, Mori, Yukimasa, Ishikawa, Takahiro, Sakai, Hiroaki, Iida, Takashi, Akiyama, Keijiro, Narita, Shogo, Sawabe, Kyoichi, Shobatake, Kosuke, and Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603. Thermal reaction of polycrystalline AlN with XeF{sub 2}. United States: N. p., 2005. Web. doi:10.1116/1.2110395.
Watanabe, Morimichi, Mori, Yukimasa, Ishikawa, Takahiro, Sakai, Hiroaki, Iida, Takashi, Akiyama, Keijiro, Narita, Shogo, Sawabe, Kyoichi, Shobatake, Kosuke, & Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603. Thermal reaction of polycrystalline AlN with XeF{sub 2}. United States. doi:10.1116/1.2110395.
Watanabe, Morimichi, Mori, Yukimasa, Ishikawa, Takahiro, Sakai, Hiroaki, Iida, Takashi, Akiyama, Keijiro, Narita, Shogo, Sawabe, Kyoichi, Shobatake, Kosuke, and Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603. Tue . "Thermal reaction of polycrystalline AlN with XeF{sub 2}". United States. doi:10.1116/1.2110395.
@article{osti_20723212,
title = {Thermal reaction of polycrystalline AlN with XeF{sub 2}},
author = {Watanabe, Morimichi and Mori, Yukimasa and Ishikawa, Takahiro and Sakai, Hiroaki and Iida, Takashi and Akiyama, Keijiro and Narita, Shogo and Sawabe, Kyoichi and Shobatake, Kosuke and Department of Molecular Design and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603},
abstractNote = {Detailed studies on the thermal reaction behavior of polycrystalline aluminum nitride (AlN) with effusive xenon difluoride (XeF{sub 2}) have been carried out over the sample temperature (T{sub s}) range from 300 to 920 K using molecular beam mass spectrometry combined with a time-of-flight technique and ex situ surface analyses, i.e., X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy (SEM). The species desorbed from the AlN/XeF{sub 2} system were monitored using molecular beam mass spectrometry, as a function of sample temperature. Above T{sub s}=800 K, the desorbed reaction products were identified as N{sub 2} and AlF{sub 3}, and their flux intensities increase monotonically as the sample temperature is increased. The flux intensity of XeF{sub 2} desorbed after physisorption to the AlN surface is found to decrease as T{sub s} is raised above T{sub s}=800 K, and approximately one half of the incoming XeF{sub 2} is consumed by the thermal reaction at 920 K. The results of surface analyses show that the thermal reaction of AlN with XeF{sub 2} starts at approximately T{sub s}=700 K, forming a reaction layer composed of AlF{sub 3}. The AlF{sub 3} layer becomes thick as T{sub s} is increased from T{sub s}=700-800 K. Above T{sub s}=800 K, however, as a result of fast desorption of AlF{sub 3} and F atoms from the AlF{sub 3} layer, only partially fluorinated AlF{sub x} (x=1 and/or 2) layers are formed and the bulk AlN is revealed again. The SEM photographs indicate that the surfaces exposed above T{sub s}=850 K are strongly etched but a slight change is observed at T{sub s}{<=}800 K. On the basis of these results, three reaction stages are proposed for the AlN/XeF{sub 2} reaction depending on the sample temperature range: Stage 1 (300{<=}T{sub s}<700 K); no reaction, stage 2 (700{<=}T{sub s}<800 K); surface fluorination, and stage 3 (800{<=}T{sub s}); etching. At stage 3, AlF{sub 3} formed on the surface starts to evaporate and fast etching proceeds, since the vapor pressure of AlF{sub 3} is high enough in this temperature range.},
doi = {10.1116/1.2110395},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 6,
volume = 23,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}