Physical properties of high pressure reactively sputtered TiO{sub 2}
- Departamento Fisica Aplicada III, Fac. Ciencias Fisicas, Universidad Complutense, E-28040 Madrid (Spain)
We present a study of the physical properties of TiO{sub 2} thin films deposited at 200 deg. C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO{sub 2} films were in situ annealed in the deposition chamber at temperatures between 600 and 900 deg. C in O{sub 2} atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO{sub 2} films are polycrystalline, and that a SiO{sub 2} film spontaneously grows at the TiO{sub 2}/Si interface. The unannealed TiO{sub 2} films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600 deg. C the TiO{sub 2} films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900 deg. C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO{sub 2} film is calculated from capacitance-voltage measurements, and very high values in the 88-102 range are obtained.
- OSTI ID:
- 20723200
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 23, Issue 6; Other Information: DOI: 10.1116/1.2056554; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION SPECTROSCOPY
ANNEALING
CAPACITANCE
DEPOSITION
ELECTRON DIFFRACTION
INFRARED SPECTRA
ION MICROPROBE ANALYSIS
OXYGEN
PERMITTIVITY
PHASE TRANSFORMATIONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
RUTILE
SILICON OXIDES
SPUTTERING
STOICHIOMETRY
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANIUM OXIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION