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Title: Physical properties of high pressure reactively sputtered TiO{sub 2}

Abstract

We present a study of the physical properties of TiO{sub 2} thin films deposited at 200 deg. C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO{sub 2} films were in situ annealed in the deposition chamber at temperatures between 600 and 900 deg. C in O{sub 2} atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO{sub 2} films are polycrystalline, and that a SiO{sub 2} film spontaneously grows at the TiO{sub 2}/Si interface. The unannealed TiO{sub 2} films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600 deg. C the TiO{sub 2} films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900 deg. C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO{sub 2} film is calculated from capacitance-voltage measurements, andmore » very high values in the 88-102 range are obtained.« less

Authors:
; ; ; ; ; ; ; ;  [1];  [2]
  1. Departamento Fisica Aplicada III, Fac. Ciencias Fisicas, Universidad Complutense, E-28040 Madrid (Spain)
  2. (Germany)
Publication Date:
OSTI Identifier:
20723200
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 23; Journal Issue: 6; Other Information: DOI: 10.1116/1.2056554; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; CAPACITANCE; DEPOSITION; ELECTRON DIFFRACTION; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; OXYGEN; PERMITTIVITY; PHASE TRANSFORMATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; RUTILE; SILICON OXIDES; SPUTTERING; STOICHIOMETRY; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

San Andres, E., Toledano-Luque, M., Prado, A. del, Navacerrada, M.A., Martil, I., Gonzalez-Diaz, G., Bohne, W., Roehrich, J., Strub, E., and Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin. Physical properties of high pressure reactively sputtered TiO{sub 2}. United States: N. p., 2005. Web. doi:10.1116/1.2056554.
San Andres, E., Toledano-Luque, M., Prado, A. del, Navacerrada, M.A., Martil, I., Gonzalez-Diaz, G., Bohne, W., Roehrich, J., Strub, E., & Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin. Physical properties of high pressure reactively sputtered TiO{sub 2}. United States. doi:10.1116/1.2056554.
San Andres, E., Toledano-Luque, M., Prado, A. del, Navacerrada, M.A., Martil, I., Gonzalez-Diaz, G., Bohne, W., Roehrich, J., Strub, E., and Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin. Tue . "Physical properties of high pressure reactively sputtered TiO{sub 2}". United States. doi:10.1116/1.2056554.
@article{osti_20723200,
title = {Physical properties of high pressure reactively sputtered TiO{sub 2}},
author = {San Andres, E. and Toledano-Luque, M. and Prado, A. del and Navacerrada, M.A. and Martil, I. and Gonzalez-Diaz, G. and Bohne, W. and Roehrich, J. and Strub, E. and Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin},
abstractNote = {We present a study of the physical properties of TiO{sub 2} thin films deposited at 200 deg. C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO{sub 2} films were in situ annealed in the deposition chamber at temperatures between 600 and 900 deg. C in O{sub 2} atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO{sub 2} films are polycrystalline, and that a SiO{sub 2} film spontaneously grows at the TiO{sub 2}/Si interface. The unannealed TiO{sub 2} films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600 deg. C the TiO{sub 2} films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900 deg. C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO{sub 2} film is calculated from capacitance-voltage measurements, and very high values in the 88-102 range are obtained.},
doi = {10.1116/1.2056554},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 6,
volume = 23,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}