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Title: Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques

Abstract

We measured electron-hole pairs generated in dielectric film using our developed on-wafer monitoring technique to detect electrical currents in the film during the plasma etching processes. The electron-hole pairs were generated by plasma induced ultraviolet (UV) photons, and the number of electron-hole pairs depends on the UV wavelength. In SiO{sub 2} film, UV light, which has a wavelength of less than 140 nm, generates electron-hole pairs, because the band gap energy of the film is 8.8 eV. On the other hand, in Si{sub 3}N{sub 4} film, which has a band gap energy level of 5.0 eV, UV light below 250 nm induces the electron-hole pairs. Additionally, we evaluated the fluorocarbon gas plasma process that induces UV radiation damage using multilayer sensors that consisted of both SiO{sub 2} and Si{sub 3}N{sub 4} stacked films. In these cases, electron-hole pair generation depended on the dielectric film structure. There were more electron-hole pairs generated in the SiO{sub 2} deposited on the Si{sub 3}N{sub 4} film than in the Si{sub 3}N{sub 4} deposited on the SiO{sub 2} film. As a result, our developed on-wafer monitoring sensor was able to predict electron-hole pair generation and the device characteristics.

Authors:
; ; ;  [1];  [2];  [2]
  1. Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20723198
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 23; Journal Issue: 6; Other Information: DOI: 10.1116/1.2049297; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ENERGY GAP; ETCHING; EV RANGE 01-10; HOLES; PHOTONS; PHYSICAL RADIATION EFFECTS; PLASMA; SILICON NITRIDES; SILICON OXIDES; THIN FILMS; ULTRAVIOLET RADIATION; WAVELENGTHS

Citation Formats

Ishikawa, Yasushi, Katoh, Yuji, Okigawa, Mitsuru, Samukawa, Seiji, Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577 Japan and Sanyo Electric Co., Ltd., Component Group, Semiconductor Company, CCD Business Unit, Development Department, 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu, 503-0195, and Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577. Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques. United States: N. p., 2005. Web. doi:10.1116/1.2049297.
Ishikawa, Yasushi, Katoh, Yuji, Okigawa, Mitsuru, Samukawa, Seiji, Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577 Japan and Sanyo Electric Co., Ltd., Component Group, Semiconductor Company, CCD Business Unit, Development Department, 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu, 503-0195, & Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577. Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques. United States. doi:10.1116/1.2049297.
Ishikawa, Yasushi, Katoh, Yuji, Okigawa, Mitsuru, Samukawa, Seiji, Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577 Japan and Sanyo Electric Co., Ltd., Component Group, Semiconductor Company, CCD Business Unit, Development Department, 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu, 503-0195, and Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577. Tue . "Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques". United States. doi:10.1116/1.2049297.
@article{osti_20723198,
title = {Prediction of ultraviolet-induced damage during plasma processes in dielectric films using on-wafer monitoring techniques},
author = {Ishikawa, Yasushi and Katoh, Yuji and Okigawa, Mitsuru and Samukawa, Seiji and Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577 Japan and Sanyo Electric Co., Ltd., Component Group, Semiconductor Company, CCD Business Unit, Development Department, 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu, 503-0195 and Intelligent Nano-Process Laboratory, Institute of Fluid Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577},
abstractNote = {We measured electron-hole pairs generated in dielectric film using our developed on-wafer monitoring technique to detect electrical currents in the film during the plasma etching processes. The electron-hole pairs were generated by plasma induced ultraviolet (UV) photons, and the number of electron-hole pairs depends on the UV wavelength. In SiO{sub 2} film, UV light, which has a wavelength of less than 140 nm, generates electron-hole pairs, because the band gap energy of the film is 8.8 eV. On the other hand, in Si{sub 3}N{sub 4} film, which has a band gap energy level of 5.0 eV, UV light below 250 nm induces the electron-hole pairs. Additionally, we evaluated the fluorocarbon gas plasma process that induces UV radiation damage using multilayer sensors that consisted of both SiO{sub 2} and Si{sub 3}N{sub 4} stacked films. In these cases, electron-hole pair generation depended on the dielectric film structure. There were more electron-hole pairs generated in the SiO{sub 2} deposited on the Si{sub 3}N{sub 4} film than in the Si{sub 3}N{sub 4} deposited on the SiO{sub 2} film. As a result, our developed on-wafer monitoring sensor was able to predict electron-hole pair generation and the device characteristics.},
doi = {10.1116/1.2049297},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 6,
volume = 23,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}