Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

Watanabe, Takayuki; Funakubo, Hiroshi

doi:10.1016/j.jssc.2004.10.019

Title: Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

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Abstract

Bismuth layer-structured ferroelectric thin films consisting of a stacking of pseudoperovskite and bismuth oxide blocks along the c-axis were epitaxially grown on single-crystal substrates by metalorganic chemical vapor deposition (MOCVD), and a selective reaction of the bismuth oxide layer with HCl was demonstrated. Epitaxial films with contrasting crystal orientations were used for the acid treatment in order to probe chemical anisotropy. For a/b-axis-oriented SrBi{sub 2}Ta{sub 2}O{sub 9}, Bi{sub 4}Ti{sub 3}O{sub 12}, and SrBi{sub 4}Ti{sub 4}O{sub 15} films with sequential stacking of the two vertical blocks, notable structural selectivity of the reaction was observed only for SrBi{sub 2}Ta{sub 2}O{sub 9}. For this film, the pseudoperovskite block remained and the bismuth oxide block was removed, while both blocks of Bi{sub 4}Ti{sub 3}O{sub 12} and SrBi{sub 4}Ti{sub 4}O{sub 15} dissolved into the acid. In addition to the bismuth, the other cations in the pseudoperovskite blocks, strontium and titanium, also decreased for Bi{sub 4}Ti{sub 3}O{sub 12} and SrBi{sub 4}Ti{sub 4}O{sub 15}. The selective reaction observed for a/b-axis-oriented SrBi{sub 2}Ta{sub 2}O{sub 9}, however, was not observed for c-axis-oriented SrBi{sub 2}Ta{sub 2}O{sub 9} films in which the pseudoperovskite and bismuth oxide blocks were stacked horizontally. The results clearly show that SrBi{sub 2}Ta{sub 2}O{sub 9} has sub-nano-ordermore »« less

Authors:

Watanabe, Takayuki ^[1]; Funakubo, Hiroshi ^[2]

Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan)
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan) and PRESTO, Japan Science and Technology Corporation (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan)

Publication Date:: Sat Jan 15 00:00:00 EST 2005

OSTI Identifier:: 20721667

Resource Type:: Journal Article

Journal Name:: Journal of Solid State Chemistry

Additional Journal Information:: Journal Volume: 178; Journal Issue: 1; Other Information: DOI: 10.1016/j.jssc.2004.10.019; PII: S0022-4596(04)00553-5; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ANISOTROPY; BISMUTH; BISMUTH OXIDES; CHEMICAL VAPOR DEPOSITION; EPITAXY; FERROELECTRIC MATERIALS; LAYERS; MONOCRYSTALS; THIN FILMS

Citation Formats


                    Watanabe, Takayuki, and Funakubo, Hiroshi. Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films.  United States: N. p., 2005. 
        Web.  doi:10.1016/j.jssc.2004.10.019.

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                    Watanabe, Takayuki, & Funakubo, Hiroshi. Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films.  United States.  https://doi.org/10.1016/j.jssc.2004.10.019

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                    Watanabe, Takayuki, and Funakubo, Hiroshi. 2005.  
        "Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films".  United States.  https://doi.org/10.1016/j.jssc.2004.10.019.

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@article{osti_20721667,

  title        = {Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films},

  author       = {Watanabe, Takayuki and Funakubo, Hiroshi},

  abstractNote = {Bismuth layer-structured ferroelectric thin films consisting of a stacking of pseudoperovskite and bismuth oxide blocks along the c-axis were epitaxially grown on single-crystal substrates by metalorganic chemical vapor deposition (MOCVD), and a selective reaction of the bismuth oxide layer with HCl was demonstrated. Epitaxial films with contrasting crystal orientations were used for the acid treatment in order to probe chemical anisotropy. For a/b-axis-oriented SrBi{sub 2}Ta{sub 2}O{sub 9}, Bi{sub 4}Ti{sub 3}O{sub 12}, and SrBi{sub 4}Ti{sub 4}O{sub 15} films with sequential stacking of the two vertical blocks, notable structural selectivity of the reaction was observed only for SrBi{sub 2}Ta{sub 2}O{sub 9}. For this film, the pseudoperovskite block remained and the bismuth oxide block was removed, while both blocks of Bi{sub 4}Ti{sub 3}O{sub 12} and SrBi{sub 4}Ti{sub 4}O{sub 15} dissolved into the acid. In addition to the bismuth, the other cations in the pseudoperovskite blocks, strontium and titanium, also decreased for Bi{sub 4}Ti{sub 3}O{sub 12} and SrBi{sub 4}Ti{sub 4}O{sub 15}. The selective reaction observed for a/b-axis-oriented SrBi{sub 2}Ta{sub 2}O{sub 9}, however, was not observed for c-axis-oriented SrBi{sub 2}Ta{sub 2}O{sub 9} films in which the pseudoperovskite and bismuth oxide blocks were stacked horizontally. The results clearly show that SrBi{sub 2}Ta{sub 2}O{sub 9} has sub-nano-order structural selectivity and chemical anisotropy in the unit cell in the reaction with HCl.},

  doi          = {10.1016/j.jssc.2004.10.019},

  url          = {https://www.osti.gov/biblio/20721667},
  journal      = {Journal of Solid State Chemistry},

  issn         = {0022-4596},

  number       = 1,

  volume       = 178,

  place        = {United States},

  year         = {Sat Jan 15 00:00:00 EST 2005},

  month        = {Sat Jan 15 00:00:00 EST 2005}

}

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