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Title: Kinetic origin of island intermixing during the growth of Ge on Si(001)

Abstract

The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620 deg. C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
20719830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 72; Journal Issue: 19; Other Information: DOI: 10.1103/PhysRevB.72.195320; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFUSION; ETCHING; GERMANIUM; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES

Citation Formats

Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A.M., Rastelli, A., Denker, U., Schmidt, O.G., and Kern, K.. Kinetic origin of island intermixing during the growth of Ge on Si(001). United States: N. p., 2005. Web. doi:10.1103/PhysRevB.72.195320.
Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A.M., Rastelli, A., Denker, U., Schmidt, O.G., & Kern, K.. Kinetic origin of island intermixing during the growth of Ge on Si(001). United States. doi:10.1103/PhysRevB.72.195320.
Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A.M., Rastelli, A., Denker, U., Schmidt, O.G., and Kern, K.. Tue . "Kinetic origin of island intermixing during the growth of Ge on Si(001)". United States. doi:10.1103/PhysRevB.72.195320.
@article{osti_20719830,
title = {Kinetic origin of island intermixing during the growth of Ge on Si(001)},
author = {Katsaros, G. and Costantini, G. and Stoffel, M. and Esteban, R. and Bittner, A.M. and Rastelli, A. and Denker, U. and Schmidt, O.G. and Kern, K.},
abstractNote = {The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620 deg. C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations.},
doi = {10.1103/PhysRevB.72.195320},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 19,
volume = 72,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}