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Title: X-ray photoelectron spectroscopy and structural analysis of amorphous SiO{sub x}N{sub y} films deposited at low temperatures

Abstract

We establish, using a tetrahedral model, the bonding properties of amorphous silicon oxynitride (a-SiO{sub x}N{sub y}) films deposited at low temperatures (LTs) by electron-cyclotron resonance chemical-vapor deposition (ECRCVD) on several substrates and under various conditions of gas flows and total gas pressure in a dilute mixture of SiH{sub 4}+N{sub 2} in Ar. The atomic percentage of each tetrahedral unit incorporated in the film network is calculated from the deconvolution of the high-resolution x-ray photoelectron spectroscopy (XPS) spectra in the Si 2p{sub 3/2} region and corroborated by the results obtained from both survey scans and the high-resolution XPS spectra in the N 1s region. The Si{sub 3}N{sub 4} phase is the most important one and the only bonding unit which is incorporated in all our LT ECRCVD SiO{sub x}N{sub y} films. The incorporation of all the other component tetrahedrons depends strongly on growth conditions. The threshold values of the N/Si atomic ratio for which intrinsic defects, such as Si-Si bonds, are not incorporated in the network depend on the O/Si ratio incorporated in the films, mainly due to the competition between oxygen and nitrogen atoms in their reaction with silicon dangling bonds. The effect of the total gas pressure on themore » atomic percentages of the oxidation states present in the LT ECRCVD SiO{sub x}N{sub y} films is qualitatively similar to the effect of the ion bombarding energy or the plasma density. O-N bonds are present only in samples having high amount of oxygen and nitrogen in their networks. For these films, our results show unambiguously the presence of the N-Si{sub 2}O tetrahedron and suggest that N-Si{sub 3-{nu}}O{sub {nu}} tetrahedrons with {nu}{>=}2 are not incorporated in their networks. A correlation is observed between the N-Si{sub 2}O and the Si-O{sub 3}(ON) tetrahedrons whose component peak is localized at (104.0{+-}0.2) eV in the Si 2p{sub 3/2} region of the XPS data, which suggests that both bonding units coexist in these films as some sort of complex bonding configuration.« less

Authors:
; ;  [1];  [2]
  1. Departmento de Fisica, Laboratorio de Simulacion de Dispositivos Semiconductores, Universidad de Oriente, Apartado 124, Cumana 6101, Sucre (Venezuela)
  2. (RQMP) and Departement de Genie Physique, Ecole Polytechnique, C.P. 6079, succ. Centre-ville, Montreal, Quebec H3C 3A7 (Canada)
Publication Date:
OSTI Identifier:
20719674
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 98; Journal Issue: 9; Other Information: DOI: 10.1063/1.2113415; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ARGON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON-RESONANCE; EV RANGE 100-1000; GAS FLOW; MIXTURES; NITROGEN; OXIDATION; OXYGEN; PLASMA DENSITY; SILANES; SILICON NITRIDES; SILICON OXIDES; SUBSTRATES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTRA

Citation Formats

Cova, P., Poulin, S., Masut, R.A., and Regroupement Quebecois sur les Materiaux de Pointe. X-ray photoelectron spectroscopy and structural analysis of amorphous SiO{sub x}N{sub y} films deposited at low temperatures. United States: N. p., 2005. Web. doi:10.1063/1.2113415.
Cova, P., Poulin, S., Masut, R.A., & Regroupement Quebecois sur les Materiaux de Pointe. X-ray photoelectron spectroscopy and structural analysis of amorphous SiO{sub x}N{sub y} films deposited at low temperatures. United States. doi:10.1063/1.2113415.
Cova, P., Poulin, S., Masut, R.A., and Regroupement Quebecois sur les Materiaux de Pointe. Tue . "X-ray photoelectron spectroscopy and structural analysis of amorphous SiO{sub x}N{sub y} films deposited at low temperatures". United States. doi:10.1063/1.2113415.
@article{osti_20719674,
title = {X-ray photoelectron spectroscopy and structural analysis of amorphous SiO{sub x}N{sub y} films deposited at low temperatures},
author = {Cova, P. and Poulin, S. and Masut, R.A. and Regroupement Quebecois sur les Materiaux de Pointe},
abstractNote = {We establish, using a tetrahedral model, the bonding properties of amorphous silicon oxynitride (a-SiO{sub x}N{sub y}) films deposited at low temperatures (LTs) by electron-cyclotron resonance chemical-vapor deposition (ECRCVD) on several substrates and under various conditions of gas flows and total gas pressure in a dilute mixture of SiH{sub 4}+N{sub 2} in Ar. The atomic percentage of each tetrahedral unit incorporated in the film network is calculated from the deconvolution of the high-resolution x-ray photoelectron spectroscopy (XPS) spectra in the Si 2p{sub 3/2} region and corroborated by the results obtained from both survey scans and the high-resolution XPS spectra in the N 1s region. The Si{sub 3}N{sub 4} phase is the most important one and the only bonding unit which is incorporated in all our LT ECRCVD SiO{sub x}N{sub y} films. The incorporation of all the other component tetrahedrons depends strongly on growth conditions. The threshold values of the N/Si atomic ratio for which intrinsic defects, such as Si-Si bonds, are not incorporated in the network depend on the O/Si ratio incorporated in the films, mainly due to the competition between oxygen and nitrogen atoms in their reaction with silicon dangling bonds. The effect of the total gas pressure on the atomic percentages of the oxidation states present in the LT ECRCVD SiO{sub x}N{sub y} films is qualitatively similar to the effect of the ion bombarding energy or the plasma density. O-N bonds are present only in samples having high amount of oxygen and nitrogen in their networks. For these films, our results show unambiguously the presence of the N-Si{sub 2}O tetrahedron and suggest that N-Si{sub 3-{nu}}O{sub {nu}} tetrahedrons with {nu}{>=}2 are not incorporated in their networks. A correlation is observed between the N-Si{sub 2}O and the Si-O{sub 3}(ON) tetrahedrons whose component peak is localized at (104.0{+-}0.2) eV in the Si 2p{sub 3/2} region of the XPS data, which suggests that both bonding units coexist in these films as some sort of complex bonding configuration.},
doi = {10.1063/1.2113415},
journal = {Journal of Applied Physics},
number = 9,
volume = 98,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}
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