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Title: Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications

Abstract

We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 10{sup 14} cm{sup -3}, yielding depletion widths in excess of 3 {mu}m. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.

Authors:
; ; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
20719670
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 98; Journal Issue: 9; Other Information: DOI: 10.1063/1.2113414; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CRYSTAL GROWTH; ENERGY GAP; EV RANGE 01-10; GALLIUM ARSENIDES; HYDROGEN; IMPURITIES; INDIUM ARSENIDES; INDIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOEMISSION; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SUBSTRATES

Citation Formats

Ptak, A.J., Friedman, D.J., Kurtz, Sarah, and Reedy, R.C. Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications. United States: N. p., 2005. Web. doi:10.1063/1.2113414.
Ptak, A.J., Friedman, D.J., Kurtz, Sarah, & Reedy, R.C. Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications. United States. doi:10.1063/1.2113414.
Ptak, A.J., Friedman, D.J., Kurtz, Sarah, and Reedy, R.C. Tue . "Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications". United States. doi:10.1063/1.2113414.
@article{osti_20719670,
title = {Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications},
author = {Ptak, A.J. and Friedman, D.J. and Kurtz, Sarah and Reedy, R.C.},
abstractNote = {We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 10{sup 14} cm{sup -3}, yielding depletion widths in excess of 3 {mu}m. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.},
doi = {10.1063/1.2113414},
journal = {Journal of Applied Physics},
number = 9,
volume = 98,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}