Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications

Journal Article · Tue Nov 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2113414· OSTI ID:20719670

Ptak, A J; Friedman, D J; Kurtz, Sarah; Reedy, R C ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We report GaInNAs grown by solid-source molecular-beam epitaxy (MBE) with background acceptor concentrations less than 10{sup 14} cm{sup -3}, yielding depletion widths in excess of 3 {mu}m. GaInNAs p-i-n solar cells fabricated from this low-acceptor-concentration material show greatly increased photocurrents and internal quantum efficiencies close to unity for band gaps as low as 1.15 eV. The low acceptor concentrations may be due to low levels of background impurities, such as hydrogen and carbon, in the MBE-grown layers. We discuss the dependence of the acceptor concentration on the substrate temperature used for GaInNAs growth.

• OSTI ID: 20719670
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 9; Other Information: DOI: 10.1063/1.2113414; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
CRYSTAL GROWTH
ENERGY GAP
EV RANGE 01-10
GALLIUM ARSENIDES
HYDROGEN
IMPURITIES
INDIUM ARSENIDES
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTOEMISSION
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SUBSTRATES