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Title: Effects of stoichiometry on electrical, optical, and structural properties of indium nitride

Abstract

A series of indium nitride (InN) epilayers with different excess indium (In) concentration are grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates. The increasing excess In concentration of the epilayers correlates with an increasing free-electron concentration and a decreasing electron mobility. Photoluminescence (PL) illustrates a 0.77-0.84 eV transition for all samples with a redshift in the peak energy with increasing In concentration (for the highest free-electron concentration of 4x10{sup 21} cm{sup -3}). This suggests that the {approx}0.8 eV PL transition is not consistent with the band-edge transition in InN. Moreover, an additional PL transition at 0.75 eV along with the In clusters observed in transmission electron microscopy analysis are found only in the 29% excess In sample. This implies a relationship between the new PL transition and the presence of In clusters. Finally, secondary-ion mass spectrometry is used to verify that the contamination, especially hydrogen (H) and oxygen (O) impurities, has no influence on the redshift of the {approx}0.8 eV PL peaks and the existence of the additional 0.75 eV peak in the sample containing In clusters.

Authors:
; ; ; ; ;  [1]
  1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 and Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
20719662
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 98; Journal Issue: 9; Other Information: DOI: 10.1063/1.2130514; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON MOBILITY; IMPURITIES; INDIUM NITRIDES; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; MILLI EV RANGE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; RED SHIFT; SAPPHIRE; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Ho, J C, Specht, P, Yang, Q, Xu, X, Hao, D, and Weber, E R. Effects of stoichiometry on electrical, optical, and structural properties of indium nitride. United States: N. p., 2005. Web. doi:10.1063/1.2130514.
Ho, J C, Specht, P, Yang, Q, Xu, X, Hao, D, & Weber, E R. Effects of stoichiometry on electrical, optical, and structural properties of indium nitride. United States. https://doi.org/10.1063/1.2130514
Ho, J C, Specht, P, Yang, Q, Xu, X, Hao, D, and Weber, E R. 2005. "Effects of stoichiometry on electrical, optical, and structural properties of indium nitride". United States. https://doi.org/10.1063/1.2130514.
@article{osti_20719662,
title = {Effects of stoichiometry on electrical, optical, and structural properties of indium nitride},
author = {Ho, J C and Specht, P and Yang, Q and Xu, X and Hao, D and Weber, E R},
abstractNote = {A series of indium nitride (InN) epilayers with different excess indium (In) concentration are grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates. The increasing excess In concentration of the epilayers correlates with an increasing free-electron concentration and a decreasing electron mobility. Photoluminescence (PL) illustrates a 0.77-0.84 eV transition for all samples with a redshift in the peak energy with increasing In concentration (for the highest free-electron concentration of 4x10{sup 21} cm{sup -3}). This suggests that the {approx}0.8 eV PL transition is not consistent with the band-edge transition in InN. Moreover, an additional PL transition at 0.75 eV along with the In clusters observed in transmission electron microscopy analysis are found only in the 29% excess In sample. This implies a relationship between the new PL transition and the presence of In clusters. Finally, secondary-ion mass spectrometry is used to verify that the contamination, especially hydrogen (H) and oxygen (O) impurities, has no influence on the redshift of the {approx}0.8 eV PL peaks and the existence of the additional 0.75 eV peak in the sample containing In clusters.},
doi = {10.1063/1.2130514},
url = {https://www.osti.gov/biblio/20719662}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 98,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}