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Title: Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

Abstract

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al{sub 0.08}Ga{sub 0.92}){sub 0.52}In{sub 0.48}P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm{sup -1}, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E{sub {nu}}+0.90{+-}0.05 eV) was observed. The changes in carrier concentrations ({delta}p) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm{sup -1}, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm{sup -1}, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm{sup 2}), the annealing activation energy of H2 defect is {delta}E=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V{sub p}-P{sub i}). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2];  [3];  [4];  [4];  [4]
  1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)
  2. (Australia)
  3. (United States)
  4. (Japan)
Publication Date:
OSTI Identifier:
20719661
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 98; Journal Issue: 9; Other Information: DOI: 10.1063/1.2115095; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; EV RANGE 01-10; FRENKEL DEFECTS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; MEV RANGE 01-10; PHOSPHORUS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS

Citation Formats

Lee, H.S., Yamaguchi, M., Ekins-Daukes, N. J., Khan, A., Takamoto, T., Agui, T., Kamimura, K., Kaneiwa, M., Imaizumi, M., Ohshima, T., Itoh, H., University of Sydney, School of Physics, New South Wales 2006, University of South Alabama, Mobile, Alabama 36688, Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, and Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells. United States: N. p., 2005. Web. doi:10.1063/1.2115095.
Lee, H.S., Yamaguchi, M., Ekins-Daukes, N. J., Khan, A., Takamoto, T., Agui, T., Kamimura, K., Kaneiwa, M., Imaizumi, M., Ohshima, T., Itoh, H., University of Sydney, School of Physics, New South Wales 2006, University of South Alabama, Mobile, Alabama 36688, Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, & Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells. United States. doi:10.1063/1.2115095.
Lee, H.S., Yamaguchi, M., Ekins-Daukes, N. J., Khan, A., Takamoto, T., Agui, T., Kamimura, K., Kaneiwa, M., Imaizumi, M., Ohshima, T., Itoh, H., University of Sydney, School of Physics, New South Wales 2006, University of South Alabama, Mobile, Alabama 36688, Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, and Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292. Tue . "Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells". United States. doi:10.1063/1.2115095.
@article{osti_20719661,
title = {Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells},
author = {Lee, H.S. and Yamaguchi, M. and Ekins-Daukes, N. J. and Khan, A. and Takamoto, T. and Agui, T. and Kamimura, K. and Kaneiwa, M. and Imaizumi, M. and Ohshima, T. and Itoh, H. and University of Sydney, School of Physics, New South Wales 2006 and University of South Alabama, Mobile, Alabama 36688 and Sharp Corporation, 282-1 Hajikami, Shinjo, Nara 639-2198 and Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 and Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gumma 370-1292},
abstractNote = {Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al{sub 0.08}Ga{sub 0.92}){sub 0.52}In{sub 0.48}P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm{sup -1}, which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E{sub {nu}}+0.90{+-}0.05 eV) was observed. The changes in carrier concentrations ({delta}p) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm{sup -1}, of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm{sup -1}, in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm{sup 2}), the annealing activation energy of H2 defect is {delta}E=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V{sub p}-P{sub i}). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center.},
doi = {10.1063/1.2115095},
journal = {Journal of Applied Physics},
number = 9,
volume = 98,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}