Optoelectronic and structural characteristics of Er-doped amorphous AlN films

Journal Article · Tue Nov 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2127120· OSTI ID:20719658

Zanatta, A R; Ribeiro, C T.M.; Jahn, U ^[1]

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1. Instituto de Fisica de Sao Carlos, USP, P.O. Box 369, Sao Carlos 13560-970 (Brazil)

This work reports on the optical, electronic, and structural properties of aluminum-nitrogen (AlN) films doped with Er. The films were deposited by conventional radio-frequency sputtering at 200 deg. C in an atmosphere of pure nitrogen. Their main characteristics have been investigated by experimental techniques such as optical transmission, photo- and cathodoluminescence, Raman scattering, and x-ray photoelectron spectroscopy. All films exhibit Er{sup 3+}-related optical emissions in the visible and infrared regions, which are considerably enhanced after thermal annealing and on measurements at low temperature. Moreover, Raman spectroscopy indicates that the films remain amorphous even after thermal treatment at 900 deg. C. Based on the composition and on the structural and luminescent properties of these Er-doped amorphous AlN films it was possible to conclude that energy excitation of Er{sup 3+} ions takes place according to different routes when electrons or photons are used. In the former case, energy is transferred from the amorphous host to the Er{sup 3+} ions by carrier-mediated processes. As a result, relatively strong Er{sup 3+}-related optical transitions can be observed in the {approx}400-1600 nm range. Excitation with 488.0 nm photons also produces visible and infrared Er{sup 3+}-related luminescence, but most of the optical excitation occurs through direct excitation of the {sup 4}F{sub 7/2} level of Er{sup 3+}. Finally, the role played by nitrogen atoms and thermal treatments on the achievement of light emission from the present AlN films is discussed and compared with the existing literature.

• OSTI ID: 20719658
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 9; Other Information: DOI: 10.1063/1.2127120; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM NITRIDES
ANNEALING
CATHODOLUMINESCENCE
DEPOSITION
DOPED MATERIALS
ERBIUM IONS
EXCITATION
INFRARED SPECTRA
NITROGEN
PHOTOLUMINESCENCE
RADIOWAVE RADIATION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
VISIBLE SPECTRA
X-RAY PHOTOELECTRON SPECTROSCOPY