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Title: Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO{sub x}:H

Abstract

Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO{sub x}:H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge.

Authors:
; ; ;  [1]
  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
20719608
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 39; Journal Issue: 11; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 1403-1407 (No. 11, 2005); DOI: 10.1134/1.2128466; (c) 2005 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); TN:
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALS; ERBIUM; ERBIUM IONS; ION EMISSION; LAYERS; OPTICAL MODES; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPUTTERING

Citation Formats

Medvedev, A.V., Feoktistov, N.A., Pevtsov, A.B., and Golubev, V.G. Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO{sub x}:H. United States: N. p., 2005. Web. doi:10.1134/1.2128466.
Medvedev, A.V., Feoktistov, N.A., Pevtsov, A.B., & Golubev, V.G. Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO{sub x}:H. United States. doi:10.1134/1.2128466.
Medvedev, A.V., Feoktistov, N.A., Pevtsov, A.B., and Golubev, V.G. Tue . "Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO{sub x}:H". United States. doi:10.1134/1.2128466.
@article{osti_20719608,
title = {Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO{sub x}:H},
author = {Medvedev, A.V. and Feoktistov, N.A. and Pevtsov, A.B. and Golubev, V.G.},
abstractNote = {Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO{sub x}:H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge.},
doi = {10.1134/1.2128466},
journal = {Semiconductors},
number = 11,
volume = 39,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}
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