Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO{sub x}:H

Journal Article · Tue Nov 15 00:00:00 EST 2005 · Semiconductors

DOI:https://doi.org/10.1134/1.2128466· OSTI ID:20719608

Medvedev, A V; Feoktistov, N A; Pevtsov, A B; Golubev, V G ^[1]

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1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)

Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO{sub x}:H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge.

• OSTI ID: 20719608
• Journal Information: Semiconductors, Vol. 39, Issue 11; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 1403-1407 (No. 11, 2005); DOI: 10.1134/1.2128466; (c) 2005 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); TN:; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
ERBIUM
ERBIUM IONS
ION EMISSION
LAYERS
OPTICAL MODES
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING