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Title: Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow

Abstract

The possibility of successful removal of fluoropolimers from the surface of silicon structures by treatment in an atomic hydrogen flow is investigated. It is ascertained that the treatment of samples in a direct atomic hydrogen flow with a density of 2 x 10{sup 15} cm{sup -2} s{sup -1} at temperatures from 20 to 100 deg. C leads to a decrease in the content of fluorocarbon residues (in particular, CF) by 5 orders of magnitude. Fluorocarbon residues are removed from both the planar surface of silicon structures and the lateral walls and the bottom of contact holes with a diameter of 0.3-0.25 {mu}m and larger and a depth of 0.9 {mu}m, opened in a SiO{sub 2} layer by reactive ion etching. A treatment time of 2 min is sufficient for complete removal of the fluoropolimers. This process of dry cleaning can be recommended for use in the fabrication of integrated circuits containing an interlayer of a low-permittivity insulator.

Authors:
;  [1]; ; ;  [2]
  1. Research Institute of Semiconductor Devices, ul. Krasnoarmeiskaya 99a, Tomsk, 634034 (Russian Federation)
  2. Institute of High-Current Electronics, Siberian Division, Russian Academy of Sciences, Akademicheskii pr. 4, Tomsk, 634021 (Russian Federation)
Publication Date:
OSTI Identifier:
20719606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 39; Journal Issue: 11; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 1389-1392 (No. 11, 2005); DOI: 10.1134/1.2128463; (c) 2005 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); TN:
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ETCHING; FABRICATION; HYDROGEN; INTEGRATED CIRCUITS; LAYERS; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SURFACE CLEANING; SURFACES; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Anishchenko, E.V., Kagadei, V.A., Nefedtsev, E.V., Proskurovskii, D.I., and Romanenko, S.V. Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow. United States: N. p., 2005. Web. doi:10.1134/1.2128463.
Anishchenko, E.V., Kagadei, V.A., Nefedtsev, E.V., Proskurovskii, D.I., & Romanenko, S.V. Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow. United States. doi:10.1134/1.2128463.
Anishchenko, E.V., Kagadei, V.A., Nefedtsev, E.V., Proskurovskii, D.I., and Romanenko, S.V. Tue . "Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow". United States. doi:10.1134/1.2128463.
@article{osti_20719606,
title = {Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow},
author = {Anishchenko, E.V. and Kagadei, V.A. and Nefedtsev, E.V. and Proskurovskii, D.I. and Romanenko, S.V.},
abstractNote = {The possibility of successful removal of fluoropolimers from the surface of silicon structures by treatment in an atomic hydrogen flow is investigated. It is ascertained that the treatment of samples in a direct atomic hydrogen flow with a density of 2 x 10{sup 15} cm{sup -2} s{sup -1} at temperatures from 20 to 100 deg. C leads to a decrease in the content of fluorocarbon residues (in particular, CF) by 5 orders of magnitude. Fluorocarbon residues are removed from both the planar surface of silicon structures and the lateral walls and the bottom of contact holes with a diameter of 0.3-0.25 {mu}m and larger and a depth of 0.9 {mu}m, opened in a SiO{sub 2} layer by reactive ion etching. A treatment time of 2 min is sufficient for complete removal of the fluoropolimers. This process of dry cleaning can be recommended for use in the fabrication of integrated circuits containing an interlayer of a low-permittivity insulator.},
doi = {10.1134/1.2128463},
journal = {Semiconductors},
number = 11,
volume = 39,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2005},
month = {Tue Nov 15 00:00:00 EST 2005}
}