Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures
- Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090 (Russian Federation)
The effect of additional implantation of hydrogen ions into the region of the interface between the split-off silicon layer and the buried insulator in silicon-on-insulator structures and subsequent high-temperature annealing on the parameters of the structures and their radiation resistance is studied. This modification of silicon-on-insulator structures gives rise to the following effects. The mobile charge present in the oxide of the initial structures becomes immobilized, which stabilizes the characteristics of silicon-on-insulator structures and simultaneously increases the fixed charge near the boundary with the split-off silicon layer. Furthermore, additional traps are introduced into the oxide; these are predominantly electron traps that accumulate negative charge during irradiation. As a result, the charge in the oxide of silicon-on-insulator structures is decreased somewhat at the initial stage of irradiation but then remains nearly unchanged up to doses of 10{sup 7} rad. Conventional accumulation of positive charge occurs at the second boundary of the structure and is typical also of initial (unmodified) silicon-on-insulator structures.
- OSTI ID:
- 20719405
- Journal Information:
- Semiconductors, Vol. 39, Issue 10; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 1195-1199 (No. 10, 2005); DOI: 10.1134/1.2085262; (c) 2005 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); TN:; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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