Effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells and GaAs{sub 1-y}N{sub y} epilayers
- European Synchrotron Radiation Facility, Boite Postale 220, 38043 Grenoble Cedex 9 (France)
- Commissariat a l'Energie Atomique, Departement de Recherche Fondamentale sur la Matiere Condensee, SP2M/NRS, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9 (France)
- Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, calle Pedro Cerbuna 12, 50009 Zaragoza (Spain)
- INFM and Department of Physics, University of Roma 'La Sapienza', P.le A. Moro 2, 00185 Rome (Italy)
- Department of Physics, University of Roma III, Via della Vasca Navale 84, 00146 Rome (Italy)
- Department of Physics and CNR-INFM, University of Bologna, V.le C. Berti Pichat 6/2, 40127 Bologna (Italy)
We address in this paper the issue of the effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells by combining In K-edge x-ray absorption and Ga K-edge x-ray diffraction anomalous fine structure experiments. We found that the cation-As bond lengths in hydrogenated samples are systematically longer than the values predicted by a valence force field model corrected for the epitaxial strain. We interpret this bond lengths stretching as a local effect of the formation of N-H complexes very recently predicted by theoretical calculations. By analyzing the Debye-Waller factor of the Ga-As bond length distribution, we observed that hydrogenation removes the static disorder induced by N incorporation in GaAs; this effect is due to the unique characteristics of the N substitutional anion and to the breaking of the ionic Ga-N bonds upon hydrogenation.
- OSTI ID:
- 20719358
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 72, Issue 8; Other Information: DOI: 10.1103/PhysRevB.72.085322; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTROSCOPY
ANIONS
BOND LENGTHS
CATIONS
DEBYE-WALLER FACTOR
DISTRIBUTION
EPITAXY
FINE STRUCTURE
GALLIUM ARSENIDES
HYDROGEN
HYDROGEN COMPLEXES
INDIUM COMPOUNDS
LAYERS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STRAINS
VALENCE
X RADIATION
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY