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Title: Effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells and GaAs{sub 1-y}N{sub y} epilayers

Abstract

We address in this paper the issue of the effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells by combining In K-edge x-ray absorption and Ga K-edge x-ray diffraction anomalous fine structure experiments. We found that the cation-As bond lengths in hydrogenated samples are systematically longer than the values predicted by a valence force field model corrected for the epitaxial strain. We interpret this bond lengths stretching as a local effect of the formation of N-H complexes very recently predicted by theoretical calculations. By analyzing the Debye-Waller factor of the Ga-As bond length distribution, we observed that hydrogenation removes the static disorder induced by N incorporation in GaAs; this effect is due to the unique characteristics of the N substitutional anion and to the breaking of the ionic Ga-N bonds upon hydrogenation.

Authors:
 [1];  [2];  [3]; ;  [4];  [5];  [6]
  1. European Synchrotron Radiation Facility, Boite Postale 220, 38043 Grenoble Cedex 9 (France)
  2. Commissariat a l'Energie Atomique, Departement de Recherche Fondamentale sur la Matiere Condensee, SP2M/NRS, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9 (France)
  3. Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, calle Pedro Cerbuna 12, 50009 Zaragoza (Spain)
  4. INFM and Department of Physics, University of Roma 'La Sapienza', P.le A. Moro 2, 00185 Rome (Italy)
  5. Department of Physics, University of Roma III, Via della Vasca Navale 84, 00146 Rome (Italy)
  6. Department of Physics and CNR-INFM, University of Bologna, V.le C. Berti Pichat 6/2, 40127 Bologna (Italy)
Publication Date:
OSTI Identifier:
20719358
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 72; Journal Issue: 8; Other Information: DOI: 10.1103/PhysRevB.72.085322; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ABSORPTION SPECTROSCOPY; ANIONS; BOND LENGTHS; CATIONS; DEBYE-WALLER FACTOR; DISTRIBUTION; EPITAXY; FINE STRUCTURE; GALLIUM ARSENIDES; HYDROGEN; HYDROGEN COMPLEXES; INDIUM COMPOUNDS; LAYERS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRAINS; VALENCE; X RADIATION; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Ciatto, G., Renevier, H., Proietti, M.G., Polimeni, A., Capizzi, M., Mobilio, S., and Boscherini, F.. Effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells and GaAs{sub 1-y}N{sub y} epilayers. United States: N. p., 2005. Web. doi:10.1103/PhysRevB.72.085322.
Ciatto, G., Renevier, H., Proietti, M.G., Polimeni, A., Capizzi, M., Mobilio, S., & Boscherini, F.. Effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells and GaAs{sub 1-y}N{sub y} epilayers. United States. doi:10.1103/PhysRevB.72.085322.
Ciatto, G., Renevier, H., Proietti, M.G., Polimeni, A., Capizzi, M., Mobilio, S., and Boscherini, F.. Mon . "Effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells and GaAs{sub 1-y}N{sub y} epilayers". United States. doi:10.1103/PhysRevB.72.085322.
@article{osti_20719358,
title = {Effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells and GaAs{sub 1-y}N{sub y} epilayers},
author = {Ciatto, G. and Renevier, H. and Proietti, M.G. and Polimeni, A. and Capizzi, M. and Mobilio, S. and Boscherini, F.},
abstractNote = {We address in this paper the issue of the effects of hydrogenation on the local structure of In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells by combining In K-edge x-ray absorption and Ga K-edge x-ray diffraction anomalous fine structure experiments. We found that the cation-As bond lengths in hydrogenated samples are systematically longer than the values predicted by a valence force field model corrected for the epitaxial strain. We interpret this bond lengths stretching as a local effect of the formation of N-H complexes very recently predicted by theoretical calculations. By analyzing the Debye-Waller factor of the Ga-As bond length distribution, we observed that hydrogenation removes the static disorder induced by N incorporation in GaAs; this effect is due to the unique characteristics of the N substitutional anion and to the breaking of the ionic Ga-N bonds upon hydrogenation.},
doi = {10.1103/PhysRevB.72.085322},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 8,
volume = 72,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2005},
month = {Mon Aug 15 00:00:00 EDT 2005}
}