Zitterbewegung and its effects on electrons in semiconductors
- Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw (Poland)
An analogy between the band structure of narrow gap semiconductors and the Dirac equation for relativistic electrons in vacuum is used to demonstrate that semiconductor electrons experience a Zitterbewegung (trembling motion). Its frequency is {omega}{sub Z}{approx_equal}E{sub g}/({Dirac_h}/2{pi}) and its amplitude is {lambda}{sub Z}, where {lambda}{sub Z}=({Dirac_h}/2{pi})/m{sub 0}*u corresponds to the Compton wavelength in vacuum (E{sub g} is the energy gap, m{sub 0}* is the effective mass, and u{approx_equal}1.3x10{sup 8} cm/s). Once the electrons are described by a two-component spinor for a specific energy band there is no Zitterbewegung but the electrons should be treated as extended objects of size {lambda}{sub Z}. The magnitude of {lambda}{sub Z} in narrow gap semiconductors can be as large as 70 A. Possible consequences of the above predictions are indicated.
- OSTI ID:
- 20719355
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 72, Issue 8; Other Information: DOI: 10.1103/PhysRevB.72.085217; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Preferred-frame and CP-violation tests with polarized electrons
Wave packet dynamics in a monolayer graphene