Polymorphism of Gd{sub 5}Si{sub 2}Ge{sub 2}: The equivalence of temperature, magnetic field, and chemical and hydrostatic pressures
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Materials and Engineering Physics Program, Ames Laboratory, Iowa State University, Ames, Iowa 50011-3020 (United States)
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)
The atomic scale details of the pressure-induced polymorphism of Gd{sub 5}Si{sub 2}Ge{sub 2} have been established by in situ x-ray powder diffraction. At room temperature, the monoclinic Gd{sub 5}Si{sub 2}Ge{sub 2} phase ({beta}) is transformed to the orthorhombic {alpha}-Gd{sub 5}Si{sub 2}Ge{sub 2}, observed previously as the low temperature, high magnetic field, or high silicon content polymorph. The transition occurs between {approx}10 kbar and {approx}20 kbar. Diffraction data provide the missing link in order to achieve a more complete understanding of how a structural change in a material can be induced by a variety of thermodynamic variables.
- OSTI ID:
- 20718989
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 71, Issue 17; Other Information: DOI: 10.1103/PhysRevB.71.174104; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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