Opacity of neutral and low ion stages of Sn at the wavelength 13.5 nm used in extreme-ultraviolet lithography
- Department of Physics, University College Dublin, Dublin 4 (Ireland)
- Center For Laser Plasma Research, Dublin City University, Glasnevin, Dublin 9 (Ireland)
Current research on sources for extreme ultraviolet lithography (EUVL) has converged on the use of discharge or laser produced plasmas containing xenon, tin, or lithium with tin showing by far the most promise. Because of their density, radiation transport from these plasmas is a major issue and accurate photoabsorption cross sections are required for the development of the plasma models needed to optimize conditions for source operation. The relative EUV photoionization cross sections of Sn I through Sn IV have been measured and from a comparison with the results of many body calculations, the cross section has been estimated to be close to 11 Mb in each species at 13.5 nm (91.8 eV), the wavelength of choice for EUVL.
- OSTI ID:
- 20718448
- Journal Information:
- Physical Review. A, Vol. 72, Issue 1; Other Information: DOI: 10.1103/PhysRevA.72.014502; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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