Characterization of nanostructure in Si{sub 1-x}Ge{sub x} epilayers using x-ray reflectivity and fluorescence techniques
- Department of Physics, State University of New York at Buffalo, Amherst, New York 14260 (United States)
X-ray reflectivity and angular dependence of x-ray fluorescence (ADXRF) techniques are used for nondestructive characterization of nanostructure and interface morphology in a series of Si{sub 1-x}Ge{sub x} epilayers grown on Si by molecular-beam epitaxy. The ADXRF method is element specific, well suited for probing the depth profile of Ge in the system without disturbing the integrity of the material structure under study. The layer thickness, interfacial roughness, Ge concentration, lattice parameters, and x-ray optical constants for the entire series have been determined. The results show that the Si{sub 1-x}Ge{sub x} epilayers with x values between 0.27 and 0.83 are neither completely pseudomorphic nor fully relaxed. We have thus demonstrated that the reflectivity and ADXRF methods can be used as effective tools for studying various types of nanostructure in alloys.
- OSTI ID:
- 20714132
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 7; Other Information: DOI: 10.1063/1.2073976; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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