skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

Abstract

Photoluminescence, time-resolved photoluminescence, and Raman characterization techniques have been used to study In{sub 0.73}Ga{sub 0.27}As{sub 0.57}P{sub 0.43}/In{sub 0.53}Ga{sub 0.47}As/InP single quantum well heterostructure after 20-keV phosphorus ion implantation followed by rapid thermal annealing. The annealing process induces intermixing in the heterostructures and results in the blueshift of the quantum well peak emission. In order to investigate ion channeling effects on this band-gap tuning process, room-temperature implantations have been performed at tilt angles of 0 deg. and 7 deg. with respect to the sample (001)-growth axis. We show that the ion channeling increases the blueshift from 24 to 42 nm, while it reduces both the density of the nonradiative defects within the active layer and the structure disordering. These features are attributed to the nature of the damage generated by channeled ions. The band-gap increase observed in the sample implanted at 0 deg. is consistent with the formation of a compressive strain at the barrier/quantum well interface, whose intensity is measured by Raman spectroscopy.

Authors:
; ; ; ; ; ;  [1]
  1. Centre de Recherche en Nanofabrication et en Nanocaracterisation, Universite de Sherbrooke, Sherbrooke, J1K 2R1 (Canada)
Publication Date:
OSTI Identifier:
20714096
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 98; Journal Issue: 5; Other Information: DOI: 10.1063/1.2033143; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; ENERGY GAP; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; ION CHANNELING; ION IMPLANTATION; KEV RANGE 10-100; LAYERS; PHOSPHORUS IONS; PHOTOLUMINESCENCE; QUANTUM WELLS; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION

Citation Formats

Barba, D, Salem, B, Morris, D, Aimez, V, Beauvais, J, Chicoine, M, Schiettekatte, F, and Departement de Physique, Universite de Montreal, H3C 3J7. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP. United States: N. p., 2005. Web. doi:10.1063/1.2033143.
Barba, D, Salem, B, Morris, D, Aimez, V, Beauvais, J, Chicoine, M, Schiettekatte, F, & Departement de Physique, Universite de Montreal, H3C 3J7. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP. United States. https://doi.org/10.1063/1.2033143
Barba, D, Salem, B, Morris, D, Aimez, V, Beauvais, J, Chicoine, M, Schiettekatte, F, and Departement de Physique, Universite de Montreal, H3C 3J7. 2005. "Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP". United States. https://doi.org/10.1063/1.2033143.
@article{osti_20714096,
title = {Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP},
author = {Barba, D and Salem, B and Morris, D and Aimez, V and Beauvais, J and Chicoine, M and Schiettekatte, F and Departement de Physique, Universite de Montreal, H3C 3J7},
abstractNote = {Photoluminescence, time-resolved photoluminescence, and Raman characterization techniques have been used to study In{sub 0.73}Ga{sub 0.27}As{sub 0.57}P{sub 0.43}/In{sub 0.53}Ga{sub 0.47}As/InP single quantum well heterostructure after 20-keV phosphorus ion implantation followed by rapid thermal annealing. The annealing process induces intermixing in the heterostructures and results in the blueshift of the quantum well peak emission. In order to investigate ion channeling effects on this band-gap tuning process, room-temperature implantations have been performed at tilt angles of 0 deg. and 7 deg. with respect to the sample (001)-growth axis. We show that the ion channeling increases the blueshift from 24 to 42 nm, while it reduces both the density of the nonradiative defects within the active layer and the structure disordering. These features are attributed to the nature of the damage generated by channeled ions. The band-gap increase observed in the sample implanted at 0 deg. is consistent with the formation of a compressive strain at the barrier/quantum well interface, whose intensity is measured by Raman spectroscopy.},
doi = {10.1063/1.2033143},
url = {https://www.osti.gov/biblio/20714096}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 98,
place = {United States},
year = {Thu Sep 01 00:00:00 EDT 2005},
month = {Thu Sep 01 00:00:00 EDT 2005}
}