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Title: Si wafer bonded of a-Si/a-SiN{sub x} distributed Bragg reflectors for 1.55-{mu}m-wavelength vertical cavity surface emitting lasers

Abstract

Amorphous silicon (a-Si) and amorphous silicon nitride (a-SiN{sub x}) layers deposited by magnetron sputtering have been analyzed in order to determine their optical and surface properties. A large value of {approx}1.9 of index difference is found between these materials. Distributed Bragg reflectors (DBRs) based on these dielectric material quarter wave layers have been studied by optical measurements and confronted to theoretical calculations based on the transfer matrix method. A good agreement has been obtained between the experimental and expected reflectivities. A maximum reflectivity of 99.5% at 1.55 {mu}m and a large spectral bandwidth of 800 nm are reached with only four and a half periods of a-Si/a-SiN{sub x}. No variation of the DBR reflectivity has been observed with the time nor when annealed above 240 deg. C and stored during few months. This result allows us to use this DBR in a metallic bonding process to realize a vertical cavity surface emitting laser (VCSEL) with two dielectric a-Si/a-SiN{sub x} DBRs. This bonding method using AuIn{sub 2} as the bonding medium and Si substrate can be performed at a low temperature of 240 deg. C without damaging the optical properties of the microcavity. The active region used for this VCSEL ismore » based on lattice-matched InGaAs/InGaAsP quantum wells and a laser emission has been obtained at room temperature on an optically pumped device.« less

Authors:
; ; ; ; ; ; ;  [1]
  1. Centre National de la Recherche Scientifigue-Unite Mixte de Recherche 6082 Institut National des Sciences Appliquees-20 Avenue des Buttes de Coeesmes, F35043 Rennes Cedex (France)
Publication Date:
OSTI Identifier:
20714042
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 98; Journal Issue: 4; Other Information: DOI: 10.1063/1.2009075; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BONDING; BRAGG REFLECTION; DEPOSITION; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; LASERS; OPTICAL PUMPING; QUANTUM WELLS; REFLECTIVITY; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TRANSFER MATRIX METHOD

Citation Formats

Levallois, C, Le Corre, A, Loualiche, S, Dehaese, O, Folliot, H, Paranthoen, C, Thoumyre, F, and Labbe, C. Si wafer bonded of a-Si/a-SiN{sub x} distributed Bragg reflectors for 1.55-{mu}m-wavelength vertical cavity surface emitting lasers. United States: N. p., 2005. Web. doi:10.1063/1.2009075.
Levallois, C, Le Corre, A, Loualiche, S, Dehaese, O, Folliot, H, Paranthoen, C, Thoumyre, F, & Labbe, C. Si wafer bonded of a-Si/a-SiN{sub x} distributed Bragg reflectors for 1.55-{mu}m-wavelength vertical cavity surface emitting lasers. United States. doi:10.1063/1.2009075.
Levallois, C, Le Corre, A, Loualiche, S, Dehaese, O, Folliot, H, Paranthoen, C, Thoumyre, F, and Labbe, C. Mon . "Si wafer bonded of a-Si/a-SiN{sub x} distributed Bragg reflectors for 1.55-{mu}m-wavelength vertical cavity surface emitting lasers". United States. doi:10.1063/1.2009075.
@article{osti_20714042,
title = {Si wafer bonded of a-Si/a-SiN{sub x} distributed Bragg reflectors for 1.55-{mu}m-wavelength vertical cavity surface emitting lasers},
author = {Levallois, C and Le Corre, A and Loualiche, S and Dehaese, O and Folliot, H and Paranthoen, C and Thoumyre, F and Labbe, C},
abstractNote = {Amorphous silicon (a-Si) and amorphous silicon nitride (a-SiN{sub x}) layers deposited by magnetron sputtering have been analyzed in order to determine their optical and surface properties. A large value of {approx}1.9 of index difference is found between these materials. Distributed Bragg reflectors (DBRs) based on these dielectric material quarter wave layers have been studied by optical measurements and confronted to theoretical calculations based on the transfer matrix method. A good agreement has been obtained between the experimental and expected reflectivities. A maximum reflectivity of 99.5% at 1.55 {mu}m and a large spectral bandwidth of 800 nm are reached with only four and a half periods of a-Si/a-SiN{sub x}. No variation of the DBR reflectivity has been observed with the time nor when annealed above 240 deg. C and stored during few months. This result allows us to use this DBR in a metallic bonding process to realize a vertical cavity surface emitting laser (VCSEL) with two dielectric a-Si/a-SiN{sub x} DBRs. This bonding method using AuIn{sub 2} as the bonding medium and Si substrate can be performed at a low temperature of 240 deg. C without damaging the optical properties of the microcavity. The active region used for this VCSEL is based on lattice-matched InGaAs/InGaAsP quantum wells and a laser emission has been obtained at room temperature on an optically pumped device.},
doi = {10.1063/1.2009075},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 98,
place = {United States},
year = {2005},
month = {8}
}