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Title: Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering

Abstract

We have used magnetron cosputtering to grow Zn{sub 1-x}Co{sub x}O magnetic dilute semiconductors. The growth has been performed on SiO{sub 2}/Si and Al{sub 2}O{sub 3}(0001) substrates. The Co concentration has been varied between 0.1 and 0.25 and the substrate temperature between room temperature and 600 deg. C. X-ray diffraction analysis has shown that for the films grown on Si substrates the structural quality of the film is improved by increasing the growth temperature and/or postgrowth annealing. The films are textured with c axis of the wurtzite structure along the growth direction. However, for the films grown on Al{sub 2}O{sub 3} substrate quasi-epitaxial films have been obtained for 600 deg. C substrate temperature. Magnetization measurements have shown that the ferromagnetism is directly correlated to the structural quality and appears by increasing the growth temperature and/or postgrowth annealing. Moreover, for the highly textured film a clear magnetic perpendicular anisotropy has been evidenced with the easy magnetization axis along the growth direction. To evidence the intrinsic nature of the ferromagnetism in the films, transmission optical measurements have been used. They show three absorption bands that are characteristics of d-d transitions of tetrahedrally coordinated Co{sup 2+}. This has been supported by nuclear magnetic resonancemore » and magnetic thermal variation.« less

Authors:
; ; ; ;  [1]
  1. Institut de Physique et Chimie des Materiaux de Strasbourg IPCMS, Centre National de la Recherche Scientifique CNRS-United Mixte de Recherche UMR 7504, Universite Louis Pasteur - ULP -Ecole Europeenne de Chimie, Polymeres et Materiaux ECPM, 23 rue du Loess, F-67034 Strasbourg (France)
Publication Date:
OSTI Identifier:
20711763
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 97; Journal Issue: 12; Other Information: DOI: 10.1063/1.1937478; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; ANISOTROPY; ANNEALING; COBALT COMPOUNDS; COBALT IONS; CRYSTAL GROWTH; DEPOSITION; EPITAXY; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETRONS; NUCLEAR MAGNETIC RESONANCE; SILICON OXIDES; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; TEXTURE; THIN FILMS; X-RAY DIFFRACTION; ZINC COMPOUNDS

Citation Formats

Dinia, A., Schmerber, G., Meny, C., Pierron-Bohnes, V., and Beaurepaire, E. Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering. United States: N. p., 2005. Web. doi:10.1063/1.1937478.
Dinia, A., Schmerber, G., Meny, C., Pierron-Bohnes, V., & Beaurepaire, E. Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering. United States. doi:10.1063/1.1937478.
Dinia, A., Schmerber, G., Meny, C., Pierron-Bohnes, V., and Beaurepaire, E. Wed . "Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering". United States. doi:10.1063/1.1937478.
@article{osti_20711763,
title = {Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering},
author = {Dinia, A. and Schmerber, G. and Meny, C. and Pierron-Bohnes, V. and Beaurepaire, E.},
abstractNote = {We have used magnetron cosputtering to grow Zn{sub 1-x}Co{sub x}O magnetic dilute semiconductors. The growth has been performed on SiO{sub 2}/Si and Al{sub 2}O{sub 3}(0001) substrates. The Co concentration has been varied between 0.1 and 0.25 and the substrate temperature between room temperature and 600 deg. C. X-ray diffraction analysis has shown that for the films grown on Si substrates the structural quality of the film is improved by increasing the growth temperature and/or postgrowth annealing. The films are textured with c axis of the wurtzite structure along the growth direction. However, for the films grown on Al{sub 2}O{sub 3} substrate quasi-epitaxial films have been obtained for 600 deg. C substrate temperature. Magnetization measurements have shown that the ferromagnetism is directly correlated to the structural quality and appears by increasing the growth temperature and/or postgrowth annealing. Moreover, for the highly textured film a clear magnetic perpendicular anisotropy has been evidenced with the easy magnetization axis along the growth direction. To evidence the intrinsic nature of the ferromagnetism in the films, transmission optical measurements have been used. They show three absorption bands that are characteristics of d-d transitions of tetrahedrally coordinated Co{sup 2+}. This has been supported by nuclear magnetic resonance and magnetic thermal variation.},
doi = {10.1063/1.1937478},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 97,
place = {United States},
year = {2005},
month = {6}
}