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Title: Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Abstract

The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Groupe d'Etude des Semiconducteurs (GES)-Unite Mixte de Recherche (UMR) 5650 Centre National de la Recherche Scientifique CNRS - Universite Montpellier 2, 34900 Montpellier (France)
Publication Date:
OSTI Identifier:
20711731
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 97; Journal Issue: 11; Other Information: DOI: 10.1063/1.1921339; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; TRANSISTORS

Citation Formats

Dyakonova, N, Teppe, F, Lusakowski, J, Knap, W, Levinshtein, M, Dmitriev, A P, Shur, M S, Bollaert, S, Cappy, A, Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, Saint Petersburg 194021, Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York, and Institut d'Electronique et de Microelectronique du Nord. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors. United States: N. p., 2005. Web. doi:10.1063/1.1921339.
Dyakonova, N, Teppe, F, Lusakowski, J, Knap, W, Levinshtein, M, Dmitriev, A P, Shur, M S, Bollaert, S, Cappy, A, Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, Saint Petersburg 194021, Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York, & Institut d'Electronique et de Microelectronique du Nord. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors. United States. https://doi.org/10.1063/1.1921339
Dyakonova, N, Teppe, F, Lusakowski, J, Knap, W, Levinshtein, M, Dmitriev, A P, Shur, M S, Bollaert, S, Cappy, A, Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, Saint Petersburg 194021, Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York, and Institut d'Electronique et de Microelectronique du Nord. 2005. "Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors". United States. https://doi.org/10.1063/1.1921339.
@article{osti_20711731,
title = {Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors},
author = {Dyakonova, N and Teppe, F and Lusakowski, J and Knap, W and Levinshtein, M and Dmitriev, A P and Shur, M S and Bollaert, S and Cappy, A and Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, Saint Petersburg 194021 and Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York and Institut d'Electronique et de Microelectronique du Nord},
abstractNote = {The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important.},
doi = {10.1063/1.1921339},
url = {https://www.osti.gov/biblio/20711731}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 97,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2005},
month = {Wed Jun 01 00:00:00 EDT 2005}
}