Near-infrared intersubband transitions in InGaAs-AlAs-InAlAs double quantum wells
- Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany)
Intersubband optical transitions at short wavelengths in strain-compensated In{sub 0.70}Ga{sub 0.30}As--AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55 {mu}m, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2-4 {mu}m. Significant oscillator strength, however, also extends out to 800 meV, 1.55 {mu}m.
- OSTI ID:
- 20711719
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 11; Other Information: DOI: 10.1063/1.1931037; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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