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Title: Formation of stable titanium germanosilicide thin films on Si{sub 1-x}Ge{sub x}

Abstract

The sequential deposition of strained Si{sub 1-x}Ge{sub x} with concentrations x=0.20 and 0.30, amorphous silicon, and titanium on Si (100) after annealing at 700 deg. C leads to the formation of a C54 Ti(Si{sub 1-y}Ge{sub y}){sub 2}/Si{sub 1-x}Ge{sub x} bilayer, the phase formation and interface stability of which are studied. The use of an amorphous layer of Si is employed to eliminate or decrease the formation of germanium-rich Si{sub 1-z}Ge{sub z} alloy precipitates found in the solid-phase reaction of Ti and Si{sub 1-x}Ge{sub x}. It has been proposed that the precipitation phenomenon was driven by differences in the enthalpy of formation as a function of concentration in the Ti(Si{sub 1-y}Ge{sub y}){sub 2} layer, resulting from the enthalpy difference between TiSi{sub 2} and TiGe{sub 2} compounds, both of which are assumed to be completely miscible with one another. Layers of amorphous silicon of varying thicknesses were incorporated between a 300-A ring Ti layer and the strained Si{sub 1-x}Ge{sub x} substrate layer to achieve Ti(Si{sub 1-y}Ge{sub y}){sub 2} films that are in equilibrium with the Si{sub 1-x}Ge{sub x} substrate. The use of amorphous silicon layers of varying thicknesses indicated that Ti(Si{sub 1-y}Ge{sub y}){sub 2}/Si{sub 1-x}Ge{sub x} films could be formed with themore » absence of germanium-rich precipitates at the grain boundaries, depending on the amorphous silicon layer thickness.« less

Authors:
; ;  [1]
  1. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
Publication Date:
OSTI Identifier:
20711716
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 97; Journal Issue: 11; Other Information: DOI: 10.1063/1.1923164; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; DEPOSITION; FORMATION HEAT; GERMANIUM ALLOYS; GRAIN BOUNDARIES; LAYERS; MOLECULAR BEAM EPITAXY; PRECIPITATION; SILICON; SILICON ALLOYS; SOLUBILITY; SUBSTRATES; THICKNESS; THIN FILMS; TITANIUM; TITANIUM SILICIDES

Citation Formats

Burnette, James E, Nemanich, Robert J, and Sayers, Dale E. Formation of stable titanium germanosilicide thin films on Si{sub 1-x}Ge{sub x}. United States: N. p., 2005. Web. doi:10.1063/1.1923164.
Burnette, James E, Nemanich, Robert J, & Sayers, Dale E. Formation of stable titanium germanosilicide thin films on Si{sub 1-x}Ge{sub x}. United States. https://doi.org/10.1063/1.1923164
Burnette, James E, Nemanich, Robert J, and Sayers, Dale E. Wed . "Formation of stable titanium germanosilicide thin films on Si{sub 1-x}Ge{sub x}". United States. https://doi.org/10.1063/1.1923164.
@article{osti_20711716,
title = {Formation of stable titanium germanosilicide thin films on Si{sub 1-x}Ge{sub x}},
author = {Burnette, James E and Nemanich, Robert J and Sayers, Dale E},
abstractNote = {The sequential deposition of strained Si{sub 1-x}Ge{sub x} with concentrations x=0.20 and 0.30, amorphous silicon, and titanium on Si (100) after annealing at 700 deg. C leads to the formation of a C54 Ti(Si{sub 1-y}Ge{sub y}){sub 2}/Si{sub 1-x}Ge{sub x} bilayer, the phase formation and interface stability of which are studied. The use of an amorphous layer of Si is employed to eliminate or decrease the formation of germanium-rich Si{sub 1-z}Ge{sub z} alloy precipitates found in the solid-phase reaction of Ti and Si{sub 1-x}Ge{sub x}. It has been proposed that the precipitation phenomenon was driven by differences in the enthalpy of formation as a function of concentration in the Ti(Si{sub 1-y}Ge{sub y}){sub 2} layer, resulting from the enthalpy difference between TiSi{sub 2} and TiGe{sub 2} compounds, both of which are assumed to be completely miscible with one another. Layers of amorphous silicon of varying thicknesses were incorporated between a 300-A ring Ti layer and the strained Si{sub 1-x}Ge{sub x} substrate layer to achieve Ti(Si{sub 1-y}Ge{sub y}){sub 2} films that are in equilibrium with the Si{sub 1-x}Ge{sub x} substrate. The use of amorphous silicon layers of varying thicknesses indicated that Ti(Si{sub 1-y}Ge{sub y}){sub 2}/Si{sub 1-x}Ge{sub x} films could be formed with the absence of germanium-rich precipitates at the grain boundaries, depending on the amorphous silicon layer thickness.},
doi = {10.1063/1.1923164},
url = {https://www.osti.gov/biblio/20711716}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 97,
place = {United States},
year = {2005},
month = {6}
}