Ion mass dependence of the etch yield of SrTiO{sub 3} films in reactive plasmas

Journal Article · Mon Sep 26 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2056611· OSTI ID:20709800

Langlois, O; Stafford, L; Margot, J; Chaker, M ^[1]

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1. Departement de Physique, Universite de Montreal, Montreal, Quebec (Canada)

The influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas is investigated using a parametric approach. The etch yield is found to decrease as the concentration fraction of molecular ions increases. Introducing the concept of effective mass for both ions and SrTiO{sub 3}, these experimental results are quantitatively explained in the framework of a well-established model originally developed to describe the sputtering of single-atom materials by noble monoatomic ions.

• OSTI ID: 20709800
• Journal Information: Applied Physics Letters, Vol. 87, Issue 13; Other Information: DOI: 10.1063/1.2056611; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ARGON
CATIONS
DIELECTRIC MATERIALS
EFFECTIVE MASS
ETCHING
MOLECULAR IONS
PLASMA
PLASMA DIAGNOSTICS
SPUTTERING
STRONTIUM TITANATES
SULFUR FLUORIDES
THIN FILMS
WALL EFFECTS