Mechanism of tantalum adhesion on SiLK{sup TM}

Journal Article · Mon Sep 19 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2051792· OSTI ID:20709794

Yue, Hu; Shuowang, Yang; Xiantong, Chen; Dong, Lu; Yuanping, Feng; Ping, Wu ^[1]

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1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

Tantalum adhesion on SiLK{sup TM} was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK{sup TM}. In addition, the degradation effects of H{sub 2}/He reactive plasma clean on Ta adhesion on SiLK{sup TM} was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK{sup TM} with Cu up to seven metal layers.

• OSTI ID: 20709794
• Journal Information: Applied Physics Letters, Vol. 87, Issue 12; Other Information: DOI: 10.1063/1.2051792; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ADHESION
ARGON
BENZENE
COPPER
DENSITY FUNCTIONAL METHOD
HELIUM
HYDROGEN
LAYERS
PLASMA
TANTALUM