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Title: Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions

Abstract

Magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal (Cr{sub 1-{delta}}Te) and semiconductor (Ga{sub 1-x}Mn{sub x}As) electrodes with an AlAs tunnel barrier have been fabricated. A nonlinear behavior was clearly observed in the current versus bias-voltage characteristics, suggesting that the electric transport between the two ferromagnetic electrodes is tunneling. The MTJs exhibited the tunnel magnetoresistance (TMR) effect up to 14.5% at 5 K. The TMR ratio was observed to rapidly decrease with increasing temperature and bias voltage. These experimental results imply that Cr{sub 1-{delta}}Te is applicable to the spintronic devices based on III-V semiconductors.

Authors:
; ;  [1]
  1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568 (Japan)
Publication Date:
OSTI Identifier:
20709705
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 97; Journal Issue: 10; Conference: 49. annual conference on magnetism and magnetic materials, Jacksonville, FL (United States), 7-11 Nov 2004; Other Information: DOI: 10.1063/1.1846591; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CHARGED-PARTICLE TRANSPORT; CHROMIUM COMPOUNDS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRODES; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; LAYERS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; SUPERCONDUCTING JUNCTIONS; TELLURIUM COMPOUNDS; TEMPERATURE RANGE 0000-0013 K; TUNNEL EFFECT

Citation Formats

Saito, H., Yuasa, S., and Ando, K. Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions. United States: N. p., 2005. Web. doi:10.1063/1.1846591.
Saito, H., Yuasa, S., & Ando, K. Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions. United States. doi:10.1063/1.1846591.
Saito, H., Yuasa, S., and Ando, K. Sun . "Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions". United States. doi:10.1063/1.1846591.
@article{osti_20709705,
title = {Tunnel magnetoresistance effect in Cr{sub 1-{delta}}Te/AlAs/Ga{sub 1-x}Mn{sub x}As magnetic tunnel junctions},
author = {Saito, H. and Yuasa, S. and Ando, K.},
abstractNote = {Magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal (Cr{sub 1-{delta}}Te) and semiconductor (Ga{sub 1-x}Mn{sub x}As) electrodes with an AlAs tunnel barrier have been fabricated. A nonlinear behavior was clearly observed in the current versus bias-voltage characteristics, suggesting that the electric transport between the two ferromagnetic electrodes is tunneling. The MTJs exhibited the tunnel magnetoresistance (TMR) effect up to 14.5% at 5 K. The TMR ratio was observed to rapidly decrease with increasing temperature and bias voltage. These experimental results imply that Cr{sub 1-{delta}}Te is applicable to the spintronic devices based on III-V semiconductors.},
doi = {10.1063/1.1846591},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 97,
place = {United States},
year = {2005},
month = {5}
}