Magnetoresistance of polycrystalline Fe{sub 3}O{sub 4} films prepared by reactive sputtering at room temperature
- Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
The magnetic, structural, and transport properties of single-layer magnetite (Fe{sub 3}O{sub 4}) films prepared by reactive sputtering were investigated. Magnetoresistance (MR) was measured at various thicknesses and temperatures. The increase in MR with thickness is related to grain crystallinity and size, as confirmed by transmission electron microscopy. MR arises from intergranular tunneling, which is supported by the temperature dependence of resistivity (log {rho}{approx}T{sup -1/2}). Field-dependent MR correlates with the M curve. Magnetoresistance versus magnetization curves clearly show that the MR effects come from the surface spin arrangement near the grain boundaries. The dependence of MR on the magnetic field observed in polycrystalline Fe{sub 3}O{sub 4} films can be attributed to a surface magnetization near the grain boundary, which will be discussed.
- OSTI ID:
- 20709694
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 10; Conference: 49. annual conference on magnetism and magnetic materials, Jacksonville, FL (United States), 7-11 Nov 2004; Other Information: DOI: 10.1063/1.1847853; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CHARGED-PARTICLE TRANSPORT
DEPOSITION
FERROMAGNETIC MATERIALS
GRAIN BOUNDARIES
GRAIN SIZE
HYSTERESIS
IRON OXIDES
MAGNETIC FIELDS
MAGNETISM
MAGNETITE
MAGNETIZATION
MAGNETORESISTANCE
POLYCRYSTALS
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT