Structural and electrical properties of Ge nanocrystals embedded in SiO{sub 2} by ion implantation and annealing
- Institut d'Electronique du Solide et des Systemes (InESS), 23 rue du Loess-BP 20-67037 Strasbourg Cedex 2 (France)
Silicon dioxide (SiO{sub 2}) on Si layers with embedded germanium nanocrystals (Ge-ncs) were fabricated using Ge{sup +} implantation and subsequent annealing. Transmission electron microscopy and Rutherford backscattering spectrometry have been used to study the Ge redistribution in the SiO{sub 2} films as a function of annealing temperature. A monolayer of Ge-ncs near the Si/SiO{sub 2} interface was formed under specific annealing conditions. This layer, with a nc density and mean size measured to be, respectively, 1.1x10{sup 12}/cm{sup 2} and 5 nm, is located at approximately 4 nm from the Si/SiO{sub 2} interface. Capacitance-voltage measurements were performed on metal-oxide-semiconductor structures containing such implanted SiO{sub 2} layers in order to study their electrical properties. The results indicate a strong memory effect at relatively low programming voltages (<5 V) due to the presence of Ge-ncs near the Si/SiO{sub 2} interface.
- OSTI ID:
- 20709673
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 10; Other Information: DOI: 10.1063/1.1909286; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation
Introduction of Si/SiO{sub 2} interface states by annealing Ge-implanted films